Diode-pumped femtosecond chirped pulse regenerative amplifiers based on Yb³⁺-materials are of practical importance for wide range of scientific, industrial and biomedical applications. The aim of this work was to study the amplification of broadband chirped femtosecond pulses in regenerative amplifier based on Yb³⁺:CaYAlO₄ crystal.

Such systems use femtosecond mode-locked lasers as seed pulse sources and amplify nJ-seed pulses to sub-mJ energy range. Most chirped pulse regenerative amplifier systems described in the literature use seed lasers with typical pulse spectral width at the level of 10–15 nm full width at half maximum (FWHM) that limit the seed pulse duration of about 90 fs and amplified pulse duration at the level of 200 fs due to strong influence of gain narrowing effect on the amplified pulse parameters. Yb³⁺-doped crystals with wide and smooth gain bandwidth as an active medium of chirped femtosecond pulse regenerative amplification systems allow to reduce negative contribution of gain narrowing effect and lead to shortening of amplified pulses. In this research we study the chirped pulse regenerative amplification of broad-band femtosecond pulses (60 nm spectral width FWHM) in the Yb³⁺:CaYAlO -based chirped pulse regenerative amplifier. Substantial reduction of the amplified pulse duration down to 120 fs (19.4 nm spectral width FWHM) with average power of 3 W at 200 kHz pulse repetition frequency was demonstrated without any gain narrowing compensation technique.

The results of experimental investigation of broad-band seeded Yb³⁺:CaYAlO -based chirped pulse regenerative amplifier are reported for the first time to our knowledge. 120 fs-pulses (19.4 nm FWHM) with average output power of 3 W were demonstrated without any gain narrowing compensation technique. Despite the significant reduction of amplified pulse duration the task of improvement group velocity dispersion balance (including high orders of group velocity dispersion) remains relevant.

Modern measuring transducers for optical diagnostic system should perform automatic parameter estimation of optical signal and automatic switching between different energetic and optical sensitivity ranges. Traditional solution of this problem lies in the field of multi-sensory systems, complex optical schemes and complex signal processing algorithms. The paper aims at the development of new measuring transducers for optical diagnostic system on a basis of multifunctional unitary photovoltaic converters built on semiconductors with low-concentration deep dopants that form multiple energy levels for different charge states in the band gap. Relative complexity of physical processes accompanying the recharge of several energy levels of multiply-charged deep dopant makes it possible to realize the multifunctionality of a photoelectric converter albeit simple sensor design.

The proposed unitary photovoltaic converters proved to have extended functional characteristics and increased ranges of energetic characteristic (by dozens dB) and spectral sensitivity characteristic with possible shifts of red margin by 2 to 4 μm in the spectral sensitivity range of 1–10 μm. Energetic and spectral sensitivity characteristic ranges could be switched either by measurement signal itself or by additional control inputs. Possible materials for resistive or barrier photovoltaic converter structure are Germanium, Silicon, А3В5 systems and other semiconductors including that compatible with «non-silicon» technologies and structures on sapphire substrate.

The mixture of argon and mercury vapor is used as the background gas in different types of gas discharge illuminating lamps. The aim of this work was development of a model, describing transport of electrons, ions and fast atoms in the one-dimensional low-current gas discharge in argon-mercury mixture, and determination of the dependence of their contributions to the cathode sputtering, limiting the device service time, on the temperature.

For simulation of motion of electrons we used the Monte Carlo method of statistical modeling, whereas the ion and metastable excited atom motion, in order to reduce the calculation time, we described on the basis of their macroscopic transport equations, which allowed to obtain their flow densities at the cathode surface. Then, using the Monte Carlo method, we found the energy spectra of ions and fast atoms, generated in collisions of ions with mixture atoms, at the cathode surface and also the effective coefficients of the cathode sputtering by each type of particles.

Calculations showed that the flow densities of argon ions and fast argon atoms, produced in collisions of argon ions with slow argon atoms, do not depend on the temperature, while the flow densities of mercury ions and fast argon atoms generated by them grow rapidly with the temperature due to an increase of mercury content in the mixture.

There are represented results of modeling of the energy spectra of ions and fast atoms at the cathode surface. They demonstrate that at low mercury content in the mixture of the order of 10–3 the energies of mercury ions exceed that of the other types of particles, so that the cathode is sputtered mainly by mercury ions, and their contribution to sputtering is reduced at a mixture temperature decrease.

In recent years, the largest terrestrial and orbital telescopes operating in a wide spectral range of wavelengths use the technology of segmented composite elements to form the main mirror. This approach allows: to expand the spectral operating range from 0.2 to 11.0 μm and to increase the diameter of the entrance pupil of the receiving optical system, while maintaining the optimal value of the exponent m_S– mass per unit area.

Two variants of adjusting the position of mirror segments are considered when forming an aspherical surface of the second order, with respect to the base surface of the nearest sphere, including geometrical and opto-technical positioning.

The purpose of the research was to develop an algorithm for solving the problem of geometric positioning of hexagonal segments of a mirror telescope, constructing an optimal circuit for traversing elements when aligning to the nearest radius to an aspherical surface, and also to program the output calculation parameters to verify the adequacy of the results obtained.

Various methods for forming arrays from regular hexagonal segments with equal air gaps between them are considered. The variant of construction of arrays through concentric rings of an equal step is offered.

A sequential three-step method for distributing mosaic segments is presented when performing calculations for aligning the aspherical surface: multipath linear; multipath point; block trapezoidal.

In the course of mathematical modeling an algorithm was developed to solve the problem of geometric positioning of flat hexagonal segments of a mirror telescope. In the Python programming language, program loops are designed to form the data array necessary to construct a specular reflective surface of a given aperture. In the software package Zemax, the convergence of optical beams from flat hexagonal elements to the central region of the aspherical surface is verified.

The application of the diffraction method for backscattered electrons allows us to take a fresh look at the structural changes in the material as a whole and on the processes of destruction of metal structures in particular. The aim of this work was to apply the method of diffraction of backscattered electrons to reveal the characteristic distinctive features of the structure of the material in areas under the fracture and away from it.

The diffraction of backscattered electrons is a method that allows one to determine the orientation of individual grains, the local texture, and also to identify the phases in the sample under research. This method can determine local and general deformations, the number of recrystallized and deformed grains, the size and misorientation of grains, etc.

The results of a study of the mast fragment of the unit for drilling and repairing wells with a carrying capacity of 200 tons (APC-200) are presented with the establishment of characteristic structural differences between the sites under the fracture and away from it.

The appearance and development of a subgrain structure at the site under the slope is established. It is shown that the material of the mast was made of rolled metal, for which no additional heat treatment was carried out, and destruction could occur at almost any point.

Residual stress distribution in multilayer semiconductor structure is complicated and has a significant impact on device characteristics and yield, therefore their study is one of the actual tasks of modern device engineering. Purpose of the present work was to develop methods of estimation of actual residual stress distribution at the whole area of semiconductor structure and its elements as well.

The estimation of residual stress distribution at the area of semiconductor structure was carried out on the basis of determining of local deformation of some areas of the structure by Makyoh topography. This method is based on consequent measurements of intensity of Makyoh image elements of the structure along the chosen direction followed by calculation of micro-geometrical profile and curvature radius.

The estimation of residual stress of topological elements Si–SiO system was carried out by means of calculation of interference pictures obtained in a film-substrate gap after separating of film edge from substrate along open window perimeter.

Analytical expressions relating semiconductor structure image characteristics with their deformation were developed by means of finite elements method. The expressions allow determining of local residual stress of chosen area of the structure. The examples of stress calculations in real structures are given.

Proposed residual stress calculation methods allow to take into consideration character and curvature form of substrate, and also to estimate their magnitude in real topological elements of semiconductor circuits.

The active application in the practice of testing the indentation methods, in particular to measure the physical and mechanical properties of metals, polymers, biological technologies demands to development techniques for the measurement error estimation. At the same time existing traditional measurement error evaluation system, based on the using of the reference blocks, is not always suitable for use in testing and research laboratories. The aim of this work was development the technique for estimating the indirect measurements error of materials physical and mechanical characteristics that can be applied in practice and based on the existing standards. Checking of the proposed approach using the experimental values of the hardness and elastic modulus obtained during static indentation for various metals.

It is shown that since the initial information about the material is an indentation curve representing the dependence of the load versus penetration depth of the indenter into the material tested, then it is better to confirm the metrological characteristics of the indentation measuring devices using the applied force and achieved displacement, but to estimate the accuracy of determining the properties through the error of indirect measurements. The equations for calculating the hardness and modulus of elasticity are derived. It allows to determine the component value most influencing the error magnitude. The calculation of error on the base of the value of boundary of a random and non-exclusive systematic error was carrying out.

The advantage of the developed technique is the fact that the measurement of the physical and mechanical characteristics is based on the experimental data and does not require the creation of the additional metrological assurance. The proposed approach seems appropriate to extend for the determination of the measurement error of other characteristics: the yield point, the strain hardening exponent, creep, relaxation, determined by the indentation methods.