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Devices and Methods of Measurements

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Poklonski N.A., Kovalev A.I., Gorbachuk N.I., Shpakovski S.V. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION. Devices and Methods of Measurements. 2018;9(2):130-141. (In Russ.) https://doi.org/10.21122/2220-9506-2018-9-2-130-141

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ISSN 2220-9506 (Print)
ISSN 2414-0473 (Online)