For citations:

Poklonski N.A., Kovalev A.I., Gorbachuk N.I., Shpakovski S.V. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION. Devices and Methods of Measurements. 2018;9(2):130-141. (In Russ.) https://doi.org/10.21122/2220-9506-2018-9-2-130-141