For citations:
Gorbachuk N.I., Poklonski N.A., Marochkina Ya.N., Shpakovski S.V. Effect of Hole Extraction from the Base Region of a Silicon p–n–p Transistor on its Reactive Impedance. Devices and Methods of Measurements. 2019;10(4):322-330. (In Russ.) https://doi.org/10.21122/2220-9506-2019-10-4-322-330