For citations:

Borzdov A.V., Borzdov V.M., Dorozhkin N.N. NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR. Devices and Methods of Measurements. 2016;7(2):161-168. https://doi.org/10.21122/2220-9506-2016-7-2-68-81