pimiПриборы и методы измеренийDevices and Methods of Measurements2220-95062414-0473BNTU10.21122/2220-9506-2016-7-2-68-81pimi-253Research ArticleМетоды измерений, контроля, диагностикиMethods of measurements, monitoring, diagnosticsЧИСЛЕННОЕ МОДЕЛИРОВАНИЕ ЭЛЕКТРИЧЕСКИХ ХАРАКТЕРИСТИК ГЛУБОКОСУБМИКРОННОГО МОП-ТРАНЗИСТОРА СО СТРУКТУРОЙ «КРЕМНИЙ НА ИЗОЛЯТОРЕ»NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTORБорздовА. В.BorzdovA. V.БорздовВ. М.BorzdovV. M.

Адрес для переписки: Борздов В.М. – Белорусский государственный университет, пр. Независимости, 4, 220030, г. Минск, Беларусь e-mail: borzdov@bsu.by

Address for correspondence: Borzdov V.M. –  Belarusian State University, Nezavisimosty Ave., 4, 220030, Minsk, Belarus e-mail: borzdov@bsu.by

borzdov@bsu.byДорожкинН. Н.DorozhkinN. N.Белорусский государственный университетБеларусьBelarusian State UniversityBelarus20161209201672161168Copyright © Борздов А.В., Борздов В.М., Дорожкин Н.Н., 20162016Борздов А.В., Борздов В.М., Дорожкин Н.Н.Borzdov A.V., Borzdov V.M., Dorozhkin N.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://pimi.bntu.by/jour/article/view/253

На сегодняшний день субмикронные МОП-транзисторные структуры кремний-на-изоляторе (КНИ) широко используются в различных электронных устройствах, а также могут применяться в качестве сенсорных элементов. Разработка приборов с заданными характеристиками на основе этих структур невозможна без компьютерного моделирования их электрических свойств. Для глубокосубмикронных транзисторных структур это весьма трудная задача, поскольку необходимо учитывать многие сложные физические процессы и эффекты, имеющие место в полупроводниковом приборе. В настоящей работе многочастичным методом Монте-Карло проведено моделирование переноса электронов и дырок в глубокосубмикронном n-канальном КНИ МОП-транзисторе с длиной канала 100 нм. Целью настоящей работы явилось исследование влияния процесса межзонной ударной ионизации на характеристики транзистора, а также установление таких режимов его работы, при которых процесс ударной ионизации начинает оказывать существенное влияние на работу прибора. Определение этих режимов является крайне необходимым для адекватного и корректного моделирования различных устройств на основе КНИ-МОП-транзисторных структур. При этом основное внимание обращено на сравнение двух моделей учета процесса ударной ионизации по степени их влияния на вольтамперные характеристики транзистора. Первая, аналитическая модель, основана на широко известном подходе Келдыша, а во второй используются результаты численного расчета зонной структуры кремния. Показано, что применение модели ударной ионизации Келдыша приводит к более быстрому росту тока стока и, как следствие, к скорейшему лавинному пробою КНИ МОП-транзисторной структуры. Сделан вывод о том, что выбор между двумя рассматриваемыми моделями ударной ионизации может быть критическим при моделировании электрических характеристик прибора. 

Today submicron silicon-on-insulator (SOI) MOSFET structures are widely used in different electronic components and also can be used as sensing elements in some applications. The development of devices based on the structures with specified characteristics is impossible without computer simulation of their electric properties. The latter is not a trivial task since many complicated physical processes and effects must be taken into account. In current study ensemble Monte Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The aim of the study is investigation of the influence of interband impact ionization process on the device characteristics and determination of the transistor operation modes when impact ionization process starts to make an appreciable influence on the device functioning. Determination of the modes is very important for adequate and accurate modeling of different devices on the basis of SOI MOSFET structures. Main focus thereby is maid on the comparison of the use of two models of impact ionization process treatment with respect to their influence on the transistor current-voltage characteristics. The first model is based on the frequently used Keldysh approach and the other one utilizes the results obtained via numerical calculations of silicon band structure. It is shown that the use of Keldysh impact ionization model leads to much faster growth of the drain current and provides earlier avalanche breakdown for the SOI MOSFET. It is concluded that the choice between the two considered impact ionization models may be critical for simulation of the device electric characteristics. 

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The authors declare that there are no conflicts of interest present.