METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS
Abstract
The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.
About the Authors
V. A. Pilipenko
«Интеграл», г. Минск
Belarus
Belarus
A. N. Petlitsky
«Интеграл», г. Минск
Belarus
Belarus
V. A. Gorushko
«Интеграл», г. Минск
Belarus
Belarus
S. V. Shvedov
«Интеграл», г. Минск
Belarus
Belarus
V. V. Ponaryadov
Белорусский государственный университет
Belarus
Belarus
References
1. Пилипенко, В.А. Лазерный метод контроля профиля изгиба кремниевых пластин / В.А. Пилипенко [и др.] // Материалы 28-ой Международной конференции «Композиционные материалы в промышленности. – Ялта. – 2008. – С. 354.
Review
For citations:
Pilipenko V.A., Petlitsky A.N., Gorushko V.A., Shvedov S.V., Ponaryadov V.V. METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS. Devices and Methods of Measurements. 2011;(1):71-76. (In Russ.)
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