SIMULATION OF AVALANCHE PHOTODIODE CONSTRUCTION WITH GUARD AREAS
https://doi.org/10.21122/2220-9506-2011-0-1-19-22
Abstract
Construction and breakdown voltage of avalanche photodiode with Read diode structure was simulated by computer. It was shown that the guard area construction composed of the metal electrode and guard rings influences on the electrical quantities of n+-p junction breakdown region.
About the Authors
N. N. KoritkoBelarus
V. B. Zalesskij
Belarus
V. S. Malishev
Belarus
V. V. Khatko
Belarus
References
1. Розеншер, Э. Оптоэлектроника / Э. Розеншер, Б. Винтер. – М. : Техносфера, 2004. – 416 c.
2. Taurus -WorkBench. User manual. – Synopsys, 2003.
3. Taurus TSUPREM4. User manual. – Synopsys, 2003.
4. Taurus Medici. User manual. – Synopsys, 2003.
5. Arora, N. D. Electron and hole mobilities in silicon as a function of concentration and temperature / N. D. Arora, J. R. Hauser, D. J. Roulston // IEEE Trans. Electron Devices. –1982. – Vol. ED–29, № 2. – P. 292–295.
6. Зи, С. Физика полупроводниковых приборов / С. Зи. – М. : Мир, 1984. – Т.2. – 456 с.
7. Корытко, Н.Н. Оптимизация конструкции лавинных фотодиодов с охранными областями / Н.Н. Корытко [и др.]// Материалы 2-й Международной конференции «Приборостроение-2009», Минск, Республика Беларусь, 11–13 ноября 2009 г. – С. 287–288.
Review
For citations:
Koritko N.N., Zalesskij V.B., Malishev V.S., Khatko V.V. SIMULATION OF AVALANCHE PHOTODIODE CONSTRUCTION WITH GUARD AREAS. Devices and Methods of Measurements. 2011;(1):32-39. (In Russ.) https://doi.org/10.21122/2220-9506-2011-0-1-19-22