Influence of Temperature from 20 to 100 °C on Specific Surface Energy and Fracture Toughness of Silicon Wafers

V. A. Lapitskaya; T. A. Kuznetsova; S. A. Chizhik

Devices and Methods of Measurements
Pribory i metody izmerenij

ISSN 2220-9506 (Print)
ISSN 2414-0473 (Online)

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Lapitskaya V.A., Kuznetsova T.A., Chizhik S.A. Influence of Temperature from 20 to 100 °C on Specific Surface Energy and Fracture Toughness of Silicon Wafers. Devices and Methods of Measurements. 2023;14(4):277-283. https://doi.org/10.21122/2220-9506-2023-14-4-277-283

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 2220-9506 (Print)
ISSN 2414-0473 (Online)

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About the Authors

V. A. Lapitskaya
A.V. Luikov Heat and Mass Transfer Institute of NAS of Belarus; Belarusian National Technical University
Belarus

Address for correspondence:
Lapitskaya V.A. –
A.V. Luikov Heat and Mass Transfer Institute of NAS of Belarus,
P. Brovki str., 15, Minsk 220072, Belarus
e-mail: vasilinka.92@mail.ru

T. A. Kuznetsova
A.V. Luikov Heat and Mass Transfer Institute of NAS of Belarus; Belarusian National Technical University
Belarus

P. Brovki str., 15, Minsk 220072;
Nezavisimosty Ave., 65, Мinsk 220013

S. A. Chizhik
A.V. Luikov Heat and Mass Transfer Institute of NAS of Belarus; Belarusian National Technical University
Belarus

P. Brovki str., 15, Minsk 220072;
Nezavisimosty Ave., 65, Мinsk 220013

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