KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING
Abstract
Improvement of repeatability and reliability of semiconductor wafers properties monitoring with a probe charge-sensitive methods is achieved by realization of Kelvin probe self-calibration mode using a wafer’s surface itself as a reference sample. Results of wafer surface scanning are visualized in the form of parameter distribution color map. A method of measurements based on Kelvin probe self-calibration mode is realized in a measurement installation for non-destructive non-contact monitoring of semiconductor wafer defects. Method can be used to define defects’ physical properties including minority carrier diffusion length and lifetime, trapped charge density and energy distribution etc.
About the Authors
R. I. Vorobey
Belarusian National Technical University
Belarus
Belarus
O. K. Gusev
Belarusian National Technical University
Belarus
Belarus
A. L. Zharin
Belarusian National Technical University
Belarus
Belarus
A. N. Petlitsky
"INTEGRAL" – Holding Management Company, Minsk
Belarus
Belarus
V. A. Pilipenko
"INTEGRAL" – Holding Management Company, Minsk
Belarus
Belarus
A. S. Turtsevitch
"INTEGRAL" – Holding Management Company, Minsk
Belarus
Belarus
A. K. Tyavlovsky
Belarusian National Technical University
Belarus
Belarus
References
1. Zharin A.L. Contact Potential Difference Techniques as Probing Tools in Tribology and Surface Mapping. Applied Scanning Probe Methods, 2010, vol. 14, pp. 687–720.
2. Ibragimov H.I., Korol’kov V.A. Rabota vykhoda elektrona v fiziko-khimicheskikh issledovaniyakh [Electron work function in physical and chemical studies]. Moscow, Intermet Engineering Publ., 2002. 526 p.
3. Tyavlovsky A.K., Gusev O.K., Zharin A.L. [Metrological performance modeling of probe electrometers capacitive sensors]. Pribory i metody izmerenij, 2011, no. 1(2), pp. 122–127 (in Russian).
4. Kim J.S., Lagel B., Moons E., Johansson N., Baikie I.D., Salaneck W.R., Friend R.H., Cacialli F. Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function: a comparison. Synthetic Metals, 2000, vol. 111–112, pp. 311–314.
5. Kronik L., Shapira Y. Surface photovoltage phenomena: theory, experiment, and applications. Surface Science Reports, 1999, vol. 37, pp. 1–206.
6. Chiang C.L., Schwarz R., Slobodin D.E., Kolodzey J., Wagner S. Measurement of the minority-carrier diffusion length in thin semiconductor films. IEEE Trans. Electron Devices, 1986, vol. 33, pp. 1587–1592.
7. Vorobey R.I., Zharin A.L., Gusev O.K., Petlitsky A.N., Pilipenko V.A., Turtsevitch A.S., Tyavlovsky A.K., Tyavlovsky K.L. [Study of silicon-insulator structure defects based on analysis of a spatial distribution of a semiconductor wafer’s surface potential]. Pribory i metody izmerenij, 2013, no. 2(7), pp. 67–72 (in Russian).
Review
For citations:
Vorobey R.I., Gusev O.K., Zharin A.L., Petlitsky A.N., Pilipenko V.A., Turtsevitch A.S., Tyavlovsky A.K. KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING. Devices and Methods of Measurements. 2014;(2):46-52. (In Russ.)
Views:
2964
Email this article 