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KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING

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Abstract

Improvement of repeatability and reliability of semiconductor wafers properties monitoring with a probe charge-sensitive methods is achieved by realization of Kelvin probe self-calibration mode using a wafer’s surface itself as a reference sample. Results of wafer surface scanning are visualized in the form of parameter distribution color map. A method of measurements based on Kelvin probe self-calibration mode is realized in a measurement installation for non-destructive non-contact monitoring of semiconductor wafer defects. Method can be used to define defects’ physical properties including minority carrier diffusion length and lifetime, trapped charge density and energy distribution etc.

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Vorobey R.I., Gusev O.K., Zharin A.L., Petlitsky A.N., Pilipenko V.A., Turtsevitch A.S., Tyavlovsky A.K. KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING. Devices and Methods of Measurements. 2014;(2):46-52. (In Russ.)

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ISSN 2220-9506 (Print)
ISSN 2414-0473 (Online)