Output Characteristics of Graphene Field Effect Transistors
https://doi.org/10.21122/2220-9506-2020-11-4-298-304
Abstract
The use of graphene, which has high mobility of charge carriers, high thermal conductivity and a number of other positive properties, is promising for the creation of new semiconductor devices with good output characteristics. The aim was to simulate the output characteristics of field effect transistors containing graphene using the Monte-Carlo method and the Poisson equation.
Two semiconductor structures in which a single layer (or monolayer) of graphene is placed on a substrate formed from 6H-SiC silicon carbide material are considered. The peculiarity of the first of them is that the contact areas of drain and source were completely located on the graphene layer, the length of which along the longitudinal coordinate was equal to the length of the substrate. The second structure differed in that the length of the graphene layer was shortened and the drain and source areas were partly located on the graphene layer and partly on the substrate.
The main output characteristics of field-effect transistors based on the two semiconductor structures considered were obtained by modeling. The modeling was performed using the statistical Monte Carlo method. To perform the simulation, a computational algorithm was developed and a program of numerical simulation using the Monte-Carlo method in three-dimensional space using the Poisson equation was compiled and debugged.
The results of the studies show that the development of field-effect transistors using graphene layers can improve the output characteristics – to increase the output current and transconductance, as well as the limit frequency of semiconductor structures in high frequency ranges.
About the Author
V. N. Mishchenka
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Address for correspondence: V.N. Mishchenka – Belarusian State University of Informatics and Radioelectronics, P. Brovka str., 6, Minsk 220013, Belarus
References
1. Moon J.S., Curtis D., Bui S., Hu M., Gaskill D.K., Tedesco J.L., Asbeek P., Jernigan G.G., VanMil B.L., Myers-Ward R.L., Eddy C.R., Campbell P.M., Weng X. Top-Gated Epitaxial FETs on SiC-Face SiC Wafers with a Peak Transconductance of 600 mS/mm. IEEE Electron Device Letters, 2010, vol. 31, no. 4, pp. 260−262. DOI: 10.1109/LED.2010.2040132
2. Moon J.S., Curtis D., Hu M., Wong D., McGuire C., Campbell P.M., Jernigan G.G., Tedesco J.L., VanMil B., Myers-Ward R.L., Eddy C., Gaskill D.K. Epitaxial-Graphene RF Field-Effect Transistors on SiFace 6H-SiC Substrates. IEEE Electron Device Letters, 2009, vol. 30, iss. 6, pp. 650−652.
3. Svintsov D.A, Vyurkov V., Lukichev V.F., Orlikovsky A.A, Burenkov A., Ohsner R. Tunnel'nye polevye tranzistory na osnove grafena. [Tunneling field effect transistors based on graphene]. Fizika i tekhnika poluprovodnikov [Physics and Technology of Semiconductors], 2013, vol. 47, iss. 2, pp. 224−250. DOI: 10.1103/PhysRevB.82.115452
4. Pennington G., Goldsman N. Self-consistent calculations for n-type hexagonal SiC inversion layers. J. Appl. Phys., 2004, vol. 95, no. 8, pp. 5496−5508. DOI: 10.1063/1.1687977
5. Persson C., Lindefelt U. Dependence of energy gaps and effective masses on atomic positions in hexagonal SiC. J. Appl. Phys., 1997, vol. 86, no. 11, pp. 5036−5039. DOI: 10.1063/1.371475
6. Vasileska D., Stephen M. Goodnick, Gerhard Klimeck. Computational electronics: semiclassical and quantum device modeling and simulation. CRC PressTaylor and Francis Group, 2010.
7. Damien Querlioz, Philippe Dollfus. The Wigner Monte Carlo method for nanoelectronics devices: a particle description of quantum transport and decoherence. – ISTE Ltd and John Wiley@Sons, Inc. – 2010.
8. Chauhan Jyotsna, Guo Jing. High-field transport and velocity saturation in graphene. Appl. Phys. Letters., 2009, vol. 95, p. 023120. DOI: 10.1063/1.3182740
9. Fang Tian, Konar Aniruddha, Xing Huili, Jena Debdeep. High-field transport in two-dimensional graphene. Physical Review., 2011, vol. B 84, p.125450. DOI: 10.1103/PhysRevD.84.125450
10. Murav’ev V.V., Mishchenka V.N. Modeling of electron transfer processes in a silicon carbide semiconductor structure. Doklady BGUIR, 2017, vol. 104, no. 2, pp. 53−57.
11. Murav’ev V.V., Mishchenka V.N. Simulation of the scattering rates in the monolayer graphene. Doklady BGUIR, 2017, vol. 108, no. 8, pp. 128−129.
Review
For citations:
Mishchenka V.N. Output Characteristics of Graphene Field Effect Transistors. Devices and Methods of Measurements. 2020;11(4):298-304. https://doi.org/10.21122/2220-9506-2020-11-4-298-304
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