EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
Abstract
The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably stronger than the intrinsic band-to-band emission in the wide temperature range of 4,2–300 K. The temperature dependent measurement of the D1 photoluminescence intensity shows that two energy levels placed below the conduction (0,04 eV) and above valence (0,32 eV) bands are responsible for this radiative recombination on dislocations.
About the Authors
A. V. Mudryi
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
V. D. Zhivulko
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
F. Mofidnakhaei
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
G. D. Ivlev
Belarusian State University
Belarus
Belarus
M. V. Yakushev
Unuiversity of Strathclyde, Glasgow
United Kingdom
United Kingdom
R. W. Martin
Unuiversity of Strathclyde, Glasgow
United Kingdom
United Kingdom
A. V. Dvurechenskii
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Russian Federation
Russian Federation
V. A. Zinovyev
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Russian Federation
Russian Federation
Zh. V. Smagina
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Russian Federation
Russian Federation
P. A. Kuchinskaja
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Russian Federation
Russian Federation
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Review
For citations:
Mudryi A.V., Zhivulko V.D., Mofidnakhaei F., Ivlev G.D., Yakushev M.V., Martin R.W., Dvurechenskii A.V., Zinovyev V.A., Smagina Zh.V., Kuchinskaja P.A. EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS. Devices and Methods of Measurements. 2014;(1):38-45. (In Russ.)
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