EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
Abstract
The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably stronger than the intrinsic band-to-band emission in the wide temperature range of 4,2–300 K. The temperature dependent measurement of the D1 photoluminescence intensity shows that two energy levels placed below the conduction (0,04 eV) and above valence (0,32 eV) bands are responsible for this radiative recombination on dislocations.
About the Authors
A. V. Mudryi
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Беларусь
Беларусь
V. D. Zhivulko
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Беларусь
Беларусь
F. Mofidnakhaei
Scientific-Practical Material Research Centre of NAS of Belarus, Minsk
Беларусь
Беларусь
G. D. Ivlev
Belarusian State University
Беларусь
Беларусь
M. V. Yakushev
Unuiversity of Strathclyde, Glasgow
Великобритания
Великобритания
R. W. Martin
Unuiversity of Strathclyde, Glasgow
Великобритания
Великобритания
A. V. Dvurechenskii
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Россия
Россия
V. A. Zinovyev
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Россия
Россия
Zh. V. Smagina
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Россия
Россия
P. A. Kuchinskaja
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk
Россия
Россия
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Review
For citations:
Mudryi A.V., Zhivulko V.D., Mofidnakhaei F., Ivlev G.D., Yakushev M.V., Martin R.W., Dvurechenskii A.V., Zinovyev V.A., Smagina Zh.V., Kuchinskaja P.A. EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS. Devices and Methods of Measurements. 2014;(1):38-45. (In Russ.)
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