For citations:
Vorobey R.I., Gusev O.K., Zharin A.L., Petlitsky A.N., Pilipenko V.A., Turtsevitch A.S., Tyavlovsky A.K., Tyavlovsky K.L. STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL. Devices and Methods of Measurements. 2013;(2):67-72. (In Russ.)
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