For citations:
Pilipenko V.А., Saladukha V.A., Filipenya V.A., Vorobey R.I., Gusev O.K., Zharin A.L., Pantsialeyeu K.V., Svistun A.I., Tyavlovsky A.K., Tyavlovsky K.L. CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS. Devices and Methods of Measurements. 2017;8(4):344-356. (In Russ.) https://doi.org/10.21122/2220-9506-2017-8-4-24-31