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Devices and Methods of Measurements

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Yakimchuk D.V., Kaniukov E.Yu., Demyanov S.E., Bundyukova V.D., Dzeinak A.V., Makoed I.I., Arzumanyan G.M., Doroshkevich N.V., Mamatkulov K.Z., Sivakov V. DEPENDENCE OF THE SURFACE-ENHANCED RAMAN SCATTERING SIGNAL ON THE SHAPE OF SILVER NANOSTRUCTURES GROWN IN THE SiO2 /n-Si POROUS TEMPLATE. Devices and Methods of Measurements. 2017;8(3):228-235. (In Russ.) https://doi.org/10.21122/2220-9506-2017-8-3-79-81



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ISSN 2220-9506 (Print)
ISSN 2414-0473 (Online)

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