HIGH REPETITION RATE MICROCHIP ER3+,YB3+:YAL3(BO3)4 DIODE-PUMPED LASER
Abstract
Diode-pumped passively Q-switched microchip Er,Yb:YAl3(BO3)4 laser for range-finding has been demonstrated. By using a Co2+:MgAl2O4 as a saturable absorber TEM00–mode Q-switched average output power of 315 mW was demonstrated at 1522 nm with pulse duration of 5 ns and pulse energy of 5,25 μJ at a repetition rate of 60 kHz.
About the Authors
K. N. Gorbachenya
Научно-исследовательский центр оптических материалов и технологий БНТУ г. Минск
Belarus
Belarus
V. E. Kisel
Научно-исследовательский центр оптических материалов и технологий БНТУ г. Минск
Belarus
Belarus
A. S. Yasukevich
Научно-исследовательский центр оптических материалов и технологий БНТУ г. Минск
Belarus
Belarus
N. V. Kuleshov
Научно-исследовательский центр оптических материалов и технологий БНТУ г. Минск
Belarus
Belarus
V. V. Maltsev
Московский государственный университет им. М. Ломоносова
Russian Federation
Russian Federation
N. I. Leonyuk
Московский государственный университет им. М. Ломоносова
Russian Federation
Russian Federation
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Review
For citations:
Gorbachenya K.N., Kisel V.E., Yasukevich A.S., Kuleshov N.V., Maltsev V.V., Leonyuk N.I. HIGH REPETITION RATE MICROCHIP ER3+,YB3+:YAL3(BO3)4 DIODE-PUMPED LASER. Devices and Methods of Measurements. 2012;(2):79-82. (In Russ.)
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