pimiПриборы и методы измеренийDevices and Methods of Measurements2220-95062414-0473BNTU10.21122/2220-9506-2025-16-4-306-314pimi-999Research ArticleСредства измеренийMeasuring instrumentsКонцепция построения интегрального оптического датчика давленияA Concept of an Integral Optical Pressure SensorБарбинЕ. С.BarbinE. S.

пр-т Ленина, 40,г. Томск 634034

Lenin Ave., 40, Tomsk 634034

БарановП. Ф.BaranovP. F.

пр-т Ленина, 30, г. Томск 634050

Lenin Ave., 30, Tomsk 634050

ИльященкоД. П.IlyaschenkoD. P.

Адрес для переписки: Национальный исследовательский Томский политехнический университет,пр-т Ленина, 30, г. Томск 634050,Россияmita8@tpu.ru

Address for correspondence:National Research Tomsk Polytechnic University,Lenin Ave., 30,Tomsk 634050, Russiamita8@tpu.ru

mita8@tpu.ruНестеренкоТ. Г.NesterenkoT. G.

пр-т Ленина, 40, г. Томск 634034

Lenin Ave., 40, Tomsk 634034,

ВторушинС. Е.VtorushinS. E.

пр-т Ленина, 40, г. Томск 634034

Lenin Ave., 40, Tomsk 634034

ТаловскаяА. А.TalovskayaA. A.

пр-т Ленина, 40, г. Томск 634034

Lenin Ave., 40,Tomsk 634034

Томский государственный университет систем управления и радиоэлектроникиРоссияTomsk State University of Control Systems and RadioelectronicsRussian FederationНациональный исследовательский Томский политехнический университетРоссияNational Research Tomsk Polytechnic UniversityRussian FederationТомский государственный университет систем управления и радиоэлектроники; Национальный исследовательский Томский политехнический университетРоссияTomsk State University of Control Systems and Radioelectronics National Research Tomsk Polytechnic UniversityRussian Federation202524122025164306314Copyright © Барбин Е.С., Баранов П.Ф., Ильященко Д.П., Нестеренко Т.Г., Вторушин С.Е., Таловская А.А., 20252025Барбин Е.С., Баранов П.Ф., Ильященко Д.П., Нестеренко Т.Г., Вторушин С.Е., Таловская А.А.Barbin E.S., Baranov P.F., Ilyaschenko D.P., Nesterenko T.G., Vtorushin S.E., Talovskaya A.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://pimi.bntu.by/jour/article/view/999

Расширение области применения автоматизированных систем требует разработки и исследований новых типов датчиков, способных работать в специальных условиях. Одними из распространённых сенсоров являются микроэлектромеханические датчики давления. Датчик давления содержит мембрану из кремния, которая деформируется при приложении к ней давления среды, и измерительный преобразователь деформации в электрический сигнал. Наиболее перспективным и технологичным интегральным типом преобразователя для микроэлектромеханических датчиков давления является измерительный преобразователь на основе эффекта оптического туннелирования, который основан на изменении интенсивности света, проходящего через зазор между двумя оптическими волноводами при деформации мембраны, что обеспечивает высокую чувствительность и широкий динамический диапазон датчика. Целью работы являлась разработка концепции построения чувствительного элемента микроэлектромеханического датчика давления с оптическим туннельным преобразователем. Технология создания микрооптоэлектромеханического датчика давления представляет собой поэтапное формирования заданных структур на двух пластинах с последующим их соединением. На нижней пластине формируется мембрана и волноводные структуры, на верхней – стопперы и волноводные структуры. Рассмотрено два варианта выполнения волноводов: из нитрида кремния методом плазмохимического осаждения или из кремния на готовой SOI платине. Определены основные характеристики (потери, зависимости коэффициентов передачи от длины и ширины волноводов, зазора, длины связи) датчика давления. Рабочий участок, на котором оптический датчик может измерять перемещения мембраны, пропорциональные действующему давлению, лежит в пределах от 500 ± 80 нм для SOI, и 600 ± 80 нм для Si3N4. Оптический коэффициент передачи меняется в диапазоне от 0 до 0,86 для SOI и от 0,09 до 0,53 для Si3N4 , соответственно. Требованием к мембране можно считать, что её деформация во всем диапазоне давлений должна лежать в диапазоне до 80 нм.

Today, an expanding application of automatic systems demands research and development of novel types of sensors suitable for special conditions. Specifically, microelectromechanical pressure sensors are among of the most widely implemented devices. A pressure sensor comprises a silicon membrane that deforms under pressure of the medium and a measuring transducer that converts the deformation into electrical signal. The most promising and technologically advanced type of transducers for microelectromechanical pressure sensors are evanescent coupling-based transducers that implement light intensity passing through the gap between two optical waveguides varying under membrane deformation. Such scheme provides high sensitivity and extended dynamic range of the sensor. The paper is aimed at developing a design concept for the sensing element of a microelectromechanical pressure sensor with an evanescent coupling-based transducer. The technology for micro-optoelectromechanical sensor fabrication bases on a stepwise formation of the structures on two silicon on insulator wafers with their consequent bonding. The membrane is formed on the bottom wafer. The top wafer comprises stoppers. The waveguide structures are formed on both the wafers. We consider two methods of waveguide fabrication. First, they can be built up from silicon nitride by plasma-enhanced chemical vapor deposition. Second, they can be etched directly in the silicon wafer. The main characteristics of the pressure sensor are determined: losses, dependencies of the transmission coefficients on the length and width of the waveguides, gap, coupling length. The working range, where the optical transducer can measure membrane displacements proportional to the acting pressure reached 500 ± 80 nm for the silicon on insulator waveguide and 600 ± 80 nm for the Si3N4 waveguide. The optical transmission coefficient ranges from 0 to 0.86 for the silicon on insulator waveguide and from 0.09 to 0.53 for the Si3N4 waveguide. The main requirement to the membrane is assumed that its deformation does not exceed 80 nm.

датчик давленияоптические волноводынаправленный ответвительpressure sensoroptical waveguidesdirectional couplerThe results were obtained with the support of the Ministry of Science and Higher Education of the Russian Federation (theme No. FEWM-2024-0008).ReferencesBhat KN, Nayak MM. MEMS Pressure SensorsAn Overview of Challenges in Technology and Packaging. Inst. Smart Struct. Syst. J. Isss J. Isss. 2012;1(1).Bhat KN, Nayak MM. MEMS Pressure SensorsAn Overview of Challenges in Technology and Packaging. Inst. Smart Struct. Syst. J. Isss J. Isss. 2012;1(1).Barlian AA, Park W-T, Mallon JR, Rastegar AJ, Pruitt BL. Review: Semiconductor Piezoresistance for Microsystems. Proceedings of the IEEE, 2009;97(3):513552. DOI:10.1109/JPROC.2009.2013612Barlian AA, Park W-T, Mallon JR, Rastegar AJ, Pruitt BL. Review: Semiconductor Piezoresistance for Microsystems. Proceedings of the IEEE, 2009;97(3):513552. https://doi.org/10.1109/JPROC.2009.2013612Kanekal D, Jindal SK. Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications. Silicon 15, 2023;15(4):1947-1959. DOI: 10.1007/s12633-022-02146-zKanekal D, Jindal SK. Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications. Silicon 15, 2023;15(4):1947-1959. DOI: 10.1007/s12633-022-02146-zKyoung-Ho Ha, Heeyong Huh, Zhengjie Li, Nanshu Lu. Soft Capacitive Pressure Sensors: Trends, Challenges, and Perspectives. ACS Nano. 2022;16(3):34423448.Kyoung-Ho Ha, Heeyong Huh, Zhengjie Li, Nanshu Lu. Soft Capacitive Pressure Sensors: Trends, Challenges, and Perspectives. ACS Nano. 2022;16(3):34423448.Kim H, Jeong YG, Chun K. Improvement of the linearity of a capacitive pressure sensor using an interdigitated electrode structure. Sensors Actuators, A Phys. 1997;62(1–3):586-590.Kim H, Jeong YG, Chun K. Improvement of the linearity of a capacitive pressure sensor using an interdigitated electrode structure. Sensors Actuators, A Phys. 1997;62(1–3):586-590.Shahiri Tabarestani M. Analytical Analysis of Capacitive Pressure Sensor with Clamped Diaphragm. Int. J. Eng. 2013;26(3):297-302.Shahiri Tabarestani M. Analytical Analysis of Capacitive Pressure Sensor with Clamped Diaphragm. Int. J. Eng. 2013;26(3):297-302.Jang M, Yun K-S. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes. Micro and Nano Systems Letters. 2017;5(1):4 р. DOI: 10.1186/s40486-016-0037-3Jang M, Yun K-S. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes. Micro and Nano Systems Letters. 2017;5(1):4 р. DOI: 10.1186/s40486-016-0037-3Boukabache A. [et al.]. Characterization and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors. Sensors Actuators, A Phys. 2000;84(3):292-296. DOI: 10.1016/S0924-4247(00)00406-4Boukabache A. [et al.]. Characterization and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors. Sensors Actuators, A Phys. 2000;84(3):292-296. DOI: 10.1016/S0924-4247(00)00406-4Belwanshi V. Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor. J Comput Electron. 2021;(20):668-680. DOI: 10.1007/s10825-020-01592-5Belwanshi V. Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor. J Comput Electron. 2021;(20):668-680. DOI: 10.1007/s10825-020-01592-5Tian B, Shang H, Zhao L [et al.]. Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design. Microsyst Technol. 2021;(27):3083-3093. DOI: 10.1007/s00542-020-05175-zTian B, Shang H, Zhao L [et al.]. Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design. Microsyst Technol. 2021;(27):3083-3093. DOI: 10.1007/s00542-020-05175-zKumar SS, Pant BD. Design principles and considerations for the “ideal” silicon piezoresistive pressure sensor: a focused review. Microsystem Technologies. 2014;20(7):1213-1247. DOI: 10.1007/s00542-014-2215-7Kumar SS, Pant BD. Design principles and considerations for the “ideal” silicon piezoresistive pressure sensor: a focused review. Microsystem Technologies. 2014;20(7):1213-1247. DOI: 10.1007/s00542-014-2215-7Park S-H, Lee HB, Yeon SM, Park J, Lee NK. Flexible and Stretchable Piezoelectric Sensor with Thickness-Tunable Configuration of Electrospun Nanofiber Mat and Elastomeric Substrates. ACS Applied Materials & Interfaces. 2016;8(37): 24773-24781. DOI: 10.1021/acsami.6b07833Park S-H, Lee HB, Yeon SM, Park J, Lee NK. Flexible and Stretchable Piezoelectric Sensor with Thickness-Tunable Configuration of Electrospun Nanofiber Mat and Elastomeric Substrates. ACS Applied Materials & Interfaces. 2016;8(37): 24773-24781. DOI: 10.1021/acsami.6b07833Qian P, Yu Z, Yu J. [et al.]. A resonant high-pressure microsensor based on a composite pressure-sensitive mechanism of diaphragm bending and volume compression. Microsyst Nanoeng. 2024;10:38 p. DOI: 10.1038/s41378-024-00667-8Qian P, Yu Z, Yu J. [et al.]. A resonant high-pressure microsensor based on a composite pressure-sensitive mechanism of diaphragm bending and volume compression. Microsyst Nanoeng. 2024;10:38 p. DOI: 10.1038/s41378-024-00667-8Yulan Lu, Pengcheng Yan, Chao Xiang, Deyong Chen, Junbo Wang, Bo Xie and Jian Chen. A Resonant Pressure Microsensor with the Measurement Range of 1 MPa Based on Sensitivities Balanced Dual Resonators. Sensors. 2019;19(10):2272. DOI: 10.3390/s19102272Yulan Lu, Pengcheng Yan, Chao Xiang, Deyong Chen, Junbo Wang, Bo Xie and Jian Chen. A Resonant Pressure Microsensor with the Measurement Range of 1 MPa Based on Sensitivities Balanced Dual Resonators. Sensors. 2019;19(10):2272. DOI: 10.3390/s19102272Yu J. [et al.]. A resonant high pressure sensor based on dual cavities design. IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). 2021;1725-1728 p.Yu J. [et al.]. A resonant high pressure sensor based on dual cavities design. IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). 2021;1725-1728 p.Mitsuhashi T. [et al.]. A resonant pressure sensor with super high resolution and stability based on novel volume shrinkage method. in Transducers. 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) 2023. JAPAN.Mitsuhashi T. [et al.]. A resonant pressure sensor with super high resolution and stability based on novel volume shrinkage method. in Transducers. 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) 2023. JAPAN.Deyong Chen, Dafu Cui, Shanhong Xia Zheng Cui. Design and Modeling of a Silicon Nitride Beam Resonant Pressure Sensor for Temperature Compensation. Proceedings of the 2005 IEEE International Conference on Information Acquisition. 2005.Deyong Chen, Dafu Cui, Shanhong Xia Zheng Cui. Design and Modeling of a Silicon Nitride Beam Resonant Pressure Sensor for Temperature Compensation. Proceedings of the 2005 IEEE International Conference on Information Acquisition. 2005.Xu MG, Geiger H, Dakin JP. Fibre grating pressure sensor with enhanced sensitivity using a glass-bubble housing. Electronics Letters. 1996;32(2). DOI: 10.1049/el:19960022Xu MG, Geiger H, Dakin JP. Fibre grating pressure sensor with enhanced sensitivity using a glass-bubble housing. Electronics Letters. 1996;32(2). DOI: 10.1049/el:19960022Arkwright JW [et al.]. Fiber Optic Pressure Sensing Arrays for Monitoring Horizontal and Vertical Pressures Generated by Traveling Water Waves. IEEE Sensors Journal. 2014;14(8):2739-2742. DOI: 10.1109/jsen.2014.2311806Arkwright JW [et al.]. Fiber Optic Pressure Sensing Arrays for Monitoring Horizontal and Vertical Pressures Generated by Traveling Water Waves. IEEE Sensors Journal. 2014;14(8):2739-2742. DOI: 10.1109/jsen.2014.2311806Wang Y, Wang DN, Wang C, Hu T. Compressible fiber optic micro-Fabry-Pérot cavity with ultra-high pressure sensitivity. Optics Express. 2013;21(12):14084. DOI: 10.1364/oe.21.014084Wang Y, Wang DN, Wang C, Hu T. Compressible fiber optic micro-Fabry-Pérot cavity with ultra-high pressure sensitivity. Optics Express. 2013;21(12):14084. DOI:10.1364/oe.21.014084Yizheng Zhu, Anbo Wang. Miniature fiber-optic pressure sensor. IEEE Photonics Technology Letters. 2005;17(2):447-449. DOI: 10.1109/lpt.2004.839002Yizheng Zhu, Anbo Wang. Miniature fiber-optic pressure sensor. IEEE Photonics Technology Letters. 2005;17(2):447-449. DOI: 10.1109/lpt.2004.839002Cibula E, Donlagic D, Stropnik C. (n.d.). Miniature fiber optic pressure sensor for medical applications. Proceedings of IEEE Sensors. 2002;(1):711-714. DOI:10.1109/ICSENS.2002.1037190Cibula E, Donlagic D, Stropnik C. (n.d.). Miniature fiber optic pressure sensor for medical applications. Proceedings of IEEE Sensors. 2002;(1):711-714. https://doi.org/10.1109/ICSENS.2002.1037190Evgenii Barbin [et al.]. The Design, Modeling and Experimental Investigation of a Micro-G Microoptoelectromechanical Accelerometer with an Optical Tunneling Measuring Transducer. Sensors. 2024;24(3):765 p. DOI: 10.3390/s24030765Evgenii Barbin [et al.]. The Design, Modeling and Experimental Investigation of a Micro-G Microoptoelectromechanical Accelerometer with an Optical Tunneling Measuring Transducer. Sensors. 2024;24(3):765 p. DOI: 10.3390/s24030765

The authors declare that there are no conflicts of interest present.