pimiПриборы и методы измеренийDevices and Methods of Measurements2220-95062414-0473BNTU10.21122/2220-9506-2025-16-2-87-97pimi-955Research ArticleСредства измеренийMeasuring instrumentsНеупорядоченные плёнки оксидов олова для термоэлектрических приложений: корреляция между микроструктурой, электропроводностью и коэффициентом ЗеебекаDisordered Tin Oxide Films for Thermoelectric Applications: Correlation between Microstructure, Electrical Conductivity and Seebeck CoefficientКсеневичВ. К.KsenevichV. K.

Адрес для переписки: Ксеневич В.К. - Белорусский государственный университет, пр. Независимости, 4, г. Минск 220030, Беларусь e-mail: ksenevich@bsu.by

Address for correspondence: Ksenevich V.K. – Belarusian State University, Nezavisimosti Ave., 4, Minsk 220030, Belarus e-mail: ksenevich@bsu.by

ksenevich@bsu.byДоросинецВ. А.DorosinetsV. A.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

СамаринаМ. А.SamarinaM. A.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

СвитоИ. А.PoklonskiN. A.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

ПоклонскийН. А.SvitoI. A.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

АдамчукД. В.AdamchukD. V.

ул. Бобруйская, 11, г. Минск 220030

Bobruiskaya str., 11, Minsk 220030

АбдурахмановГ.AbdurakhmanovG.

ул. Университетская, 4, г. Ташкент 100174

Universitetskaya str., 4, Tashkent 100174

Белорусский государственный университетБеларусьBelarusian State UniversityBelarusИнститут ядерных проблем Белорусского государственного университетаБеларусьInstitute for Nuclear Problems of Belarusian State UniversityBelarusНациональный университет Узбекистана имени Мирзо УлугбекаУзбекистанNational University of Uzbekistan named after Mirzo UlugbekUzbekistan2025020720251628797Copyright © Ксеневич В.К., Доросинец В.А., Самарина М.А., Свито И.А., Поклонский Н.А., Адамчук Д.В., Абдурахманов Г., 20252025Ксеневич В.К., Доросинец В.А., Самарина М.А., Свито И.А., Поклонский Н.А., Адамчук Д.В., Абдурахманов Г.Ksenevich V.K., Dorosinets V.A., Samarina M.A., Poklonski N.A., Svito I.A., Adamchuk D.V., Abdurakhmanov G.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://pimi.bntu.by/jour/article/view/955

Цель работы – установление взаимосвязи между структурными, электрическими и термоэлектрическими свойствами неупорядоченных плёнок оксидов олова для определения возможности дальнейшего их применения в качестве материалов для термоэлектрических преобразователей. Неупорядоченные многофазные плёнки оксидов олова синтезированы методом магнетронного распыления олова на стеклянные подложки в плазме аргона c последующим двухстадийным отжигом на воздухе. Структурные, электрические и термоэлектрические свойства плёнок варьировались посредством изменения температуры на 2-й стадии отжига в диапазоне 350–450 °C. Установлено, что плёнки, синтезированные при температуре 350 °С на 2-й стадии отжига, имеют рентгеноаморфную структуру и характеризуются наибольшей величиной удельной электропроводности σ ≈ 28,5 См/м. Структура образцов, полученных при температурах 400 и 450 °С на 2-й стадии отжига, является поликристаллической многофазной, с наличием в их составе как стехиометрических (SnO, SnO2), так и нестехиометрических (Sn2O3 и Sn3O4) фаз оксидов олова (с преобладанием фазы SnO2 при отжиге при 450 °С). При этом эти образцы характеризуются большей величиной коэффициента Зеебека S (–156 мкВ/К и –163 мкВ/К соответственно) по сравнению с рентгеноаморфными плёнками, для которых величина S = –90 мкВ/К. Установлено, что электропроводность как аморфных, так и поликристаллических плёнок оксидов олова в диапазоне температур ≈ 80–300 К может быть описана в рамках модели, предполагающей активацию электронов с примесных уровней в запрещённой зоне, связанных с кислородными вакансиями в различных зарядовых состояниях. Показано, что для всех исследованных образцов для оценки взаимосвязи между коэффициентом Зеебека S и положением уровня Ферми EF может быть применена формула Писаренко при условии, что параметр r < –2.

The aim of the work was to establish a correlation between structural, electrical and thermoelectric properties of the disordered tin oxide films to study the possibility of their further applications as materials for thermoelectric converters. Disordered multiphase tin oxide films were synthesized by magnetron sputtering of tin onto glass substrates in argon plasma and subsequent two-stage annealing in air. The structural, electrical and thermoelectric properties of the films were varied by changing the temperature at the 2nd stage of annealing in the range of 350–450 °C. It was found that the films synthesized at a temperature of 350 °C during the 2nd stage of annealing procedure have an amorphous structure and are characterized by the highest value of specific electrical conductivity σ ≈ 28.5 S/m. Samples fabricated at temperatures 400 and 450 °C during the 2nd stage of annealing are characterized by polycrystalline multiphase structure with both stoichiometric (SnO, SnO2) and non-stoichiometric (Sn2O3 and Sn3O4) phases of tin oxides in their composition (with prevailing of SnO2 phase for the samples annealed at 450 °C). It was found that these samples are characterized by a higher value of the Seebeck coefficient S (–156 μV/K and –163 μV/K, respectively) compared to the amorphous films, for which the value S = –90 μV/K. It was found that the electrical conductivity of both amorphous and polycrystalline tin oxide films in the temperature range of ≈ 80–300 K can be described within the frame of a model that assumes the activation of electrons from impurity levels in the band gap associated with oxygen vacancies in different charge states. It was demonstrated that for all types of the samples, the Pisarenko’s formula can be applied to evaluate the relationship between the Seebeck coefficient S and the position of the Fermi level EF if the parameter r < –2.

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The authors declare that there are no conflicts of interest present.