pimiПриборы и методы измеренийDevices and Methods of Measurements2220-95062414-0473BNTU10.21122/2220-9506-2024-15-4-323-333pimi-903Research ArticleМетоды измерений, контроля, диагностикиMethods of measurements, monitoring, diagnosticsТонкоплёночная технология корпусирования микроэлектромеханических систем на основе каркасной структурыWafer-Level Packaging of Microelectromechanical Systems Based on Frame StructureБарбинЕ. С.BarbinE. S.

пр-т Ленина, 40, г. Томск 634050

Lenina Avenue, 40, 634050, Tomsk, Russia

 

КулиничИ. В.KulinichI. V.

пр-т Ленина, 40, г. Томск 634050

Lenina Avenue, 40, 634050, Tomsk, Russia

 

НестеренкоТ. Г.NesterenkoT. G.

Адрес для переписки: Нестеренко Т.Г. –Национальный исследовательский Томский политехнический университет,пр-т Ленина, 30, г. Томск 634050, Россия e-mail: ntg@tpu.ru

Address for correspondence:Nesterenko T.G. –National Research Tomsk Polytechnic University,Lenin Ave., 30, Tomsk 634050, Russia e-mail: ntg@tpu.ru

 

ntg@tpu.ruКоледаА. Н.KoledaA. N.

пр-т Ленина, 30, г. Томск 634050; пр-т Ленина, 40, г. Томск 634050

Lenina Avenue, 30, 634050, Tomsk, Russia; Lenina Avenue, 40, 634050, Tomsk, Russia

ШестериковЕ. В.ShesterikovE. V.

пр-т Ленина, 40, г. Томск 634050

Lenina Avenue, 40, 634050

БарановП. Ф.BaranovP. F.

пр-т Ленина, 30, г. Томск 634050

Lenina Avenue, 30, 634050, Tomsk, Russia

ИльященкоД. П.Il’yaschenkoD. P.

пр-т Ленина, 30, г. Томск 634050

Lenina Avenue, 30, 634050, Tomsk, Russia

Томский государственный университет систем управления и радиоэлектроникиРоссияTomsk State University of Control Systems and RadioelectronicsRussian FederationНациональный исследовательский Томский политехнический университет; Томский государственный университет систем управления и радиоэлектроникиРоссияNational Research Tomsk Polytechnic University; Tomsk State University of Control Systems and RadioelectronicsRussian FederationНациональный исследовательский Томский политехнический университетРоссияNational Research Tomsk Polytechnic UniversityRussian Federation202412122024154323333Copyright © Барбин Е.С., Кулинич И.В., Нестеренко Т.Г., Коледа А.Н., Шестериков Е.В., Баранов П.Ф., Ильященко Д.П., 20242024Барбин Е.С., Кулинич И.В., Нестеренко Т.Г., Коледа А.Н., Шестериков Е.В., Баранов П.Ф., Ильященко Д.П.Barbin E.S., Kulinich I.V., Nesterenko T.G., Koleda A.N., Shesterikov E.V., Baranov P.F., Il’yaschenko D.P.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://pimi.bntu.by/jour/article/view/903

Современные МЭМС – это устройства, объединяющие в себе микроэлектронные компоненты и микромеханические структуры на одном чипе. Процесс корпусирования является обязательным этапом изготовления МЭМС устройств, который обеспечивает механическую защиту, герметичное уплотнение, передачу электроэнергии и сигналов. Целью данной работы являлась разработка способа корпусирования МЭМС, который входит в единый технологический процесс изготовления устройства. Разработка такого метода корпусирования осуществлена на примере СВЧ МЭМС ключа. Схема технологического процесса изготовления СВЧ МЭМС ключа включает в себя традиционные процессы технологии арсенид-галлиевых интегральных схем, такие как оптическая литография, жидкостное травление, электронно-лучевое и магнетронное осаждение металлических, резистивных и диэлектрических пленок. В работе представлена новая межпластинчатая упаковка МЭМС на основе каркасной конструкции с пассивирующей плёнкой. Основная задача каркасного слоя корпуса – обеспечение механической поддержки вышележащему слою герметизирующего материала. Каркасный слой должен обладать структурой, позволяющей беспрепятственно удалять жертвенный слой фоторезиста, и быть непроницаемым для герметизирующего материала. Для выполнения этих требований использована металлическая пространственная рама, выполненная на основе тонкой плёнки меди, полученной методом гальванического осаждения. Каркасная конструкция имеет форму геодезического купола, состоящего из сложной сети треугольных ячеек, расположенных рядами. Соединённые треугольники создают самоподдерживающийся структурно прочный каркас. Результаты измерений и моделирования показали, что круглая рамочная конструкция является более жёсткой, чем квадратная рамная конструкция с таким же максимальным размером ячейки. Напряженно-деформированное состояние круглой рамной конструкции существенно изменяется в зависимости от количества рядов треугольных ячеек каркасной конструкции. Кроме механической поддержки ячеистая структура каркаса при соответствующем подборе размера ячейки, вязкости растворителя и герметизирующего слоя позволяет беспрепятственно проникать растворителю (N-метилпирролидон) и удалять жертвенные слои фоторезиста ma-P1225. При этом структура данного слоя непроницаема для герметизирующего материала (бизбензоциклобутена). Предложенная упаковка МЭМС ключа позволяет серийно производить интегральные схемы GaAs, в едином технологическом процессе, что расширяет их частотный диапазон. Предлагаемая новая технология упаковки на уровне пластины полностью совместима с технологией производства МЭМС без использования специальных материалов и оборудования, что позволяет снизить габариты и стоимость МЭМС.

Modern microelectromechanical systems (MEMS) are devices that incorporate microelectronic components and micromechanical structures on a single chip. Packaging is a mandatory stage in MEMS manufacturing. It ensures mechanical protection, sealing and transmission of electric energy and signals. The present work was aimed at developing a MEMS packaging method as a part of the consolidated manufacturing process. The method is developed on the example of a microwave MEMS switch. The switch manufacturing scheme includes conventional technologies used for producing gallium arsenide integrated circuits: optical lithography, liquid etching, electron-beam and magnetron deposition of metallic, resistive and dielectric films. The work presents a new inter-plate MEMS packaging based on a frame structure with a passivating film. The main purpose of the package frame layer is mechanical support for an upper layer of the sealing material. The frame layer should have the structure allowing for unimpeded removal of the sacrificial photoresist and be impermeable for the sealant. To satisfy the requirements stated, a metallic thin copper-film spatial frame was fabricated by galvanic deposition. The frame structure is a geodesic dome comprised of a complex network of triangle cells arranged in rows. The connected triangles create a self-supporting durable framework. The measurement and modeling results demonstrate that the round frame structure is more durable than a square frame with the same maximum cell dimensions. The stress-strain state for the round framework considerably alters depending on the number of rows of triangle cells. In addition to the mechanical support, the cell structure of the framework – with adequate selection of cell dimensions, solvent and sealant viscosities – allows for unimpeded penetration of the solvent (N-methyl-2-pyrrolidone, NMP) and removal of ma-P1225 photoresist sacrificial layers. At the same time, the layer structure is impermeable for the sealant (benzocyclobutene, BCB). The proposed MEMS switch packaging enables mass fabrication of GaAs integrated circuits in a single process, which expands their frequency range. The new plate-level packaging technology is absolutely compatible with MEMS fabrication technology without specific materials and equipment which reduces the dimensions and cost of MEMS.

МЭМСгетероинтеграцияупаковкагеодезический куполMEMSheterointegrationpackaginggeodesic domeThe results were obtained within the state assignment of the Ministry of Science and Higher Education of the Russian Federation (theme no. FEWM-2024-0008).ReferencesXia D, Yu C, Kong L. The Development of Micromachined Gyroscope Structure and Circuitry Technology. Sensors.2014;14(1):1394-1473. DOI: 10.3390/s140101394Xia D, Yu C, Kong L. The Development of Micromachined Gyroscope Structure and Circuitry Technology. Sensors.2014;14(1):1394-1473. DOI: 10.3390/s140101394Xie H, Fedder GK. Fabrication, Characterization, and Analysis of a DRIE CMOS-MEMS Gyroscope. IEEE Sensors Journal. 2003;3(5):622-631. DOI: 10.1109/JSEN.2003.817901Xie H, Fedder GK. Fabrication, Characterization, and Analysis of a DRIE CMOS-MEMS Gyroscope. IEEE Sensors Journal. 2003;3(5):622-631. DOI: 10.1109/JSEN.2003.817901Olsson RH, Bogart GR, Baker MS, Carr DW, Swiler TP, Clews PJ, Krishnamoorthya U. In-plane MEMS-based nano-g accelerometer with sub-wavelength optical resonant sensor. Sensors and Actuators A: Physical. 2008:283-290 pp. DOI: 10.1016/j.sna.2008.03.017Olsson RH, Bogart GR, Baker MS, Carr DW, Swiler TP, Clews PJ, Krishnamoorthya U. In-plane MEMS-based nano-g accelerometer with sub-wavelength optical resonant sensor. Sensors and Actuators A: Physical. 2008:283-290 pp. DOI: 10.1016/j.sna.2008.03.017Samuelson SR, Xie HA. Large Piston Displacement MEMS Mirror with Electrothermal Ladder Actuator Arrays for Ultra-Low Tilt Applications. Journal of Microelectromechanical Systems. 2014;23(1):39-49. DOI: 10.1109/JMEMS.2013.2290994Samuelson SR, Xie HA. Large Piston Displacement MEMS Mirror with Electrothermal Ladder Actuator Arrays for Ultra-Low Tilt Applications. Journal of Microelectromechanical Systems. 2014;23(1):39-49. DOI: 10.1109/JMEMS.2013.2290994Zhang H, Huang J, Yuan W, Chang HA. HighSensitivity Micromechanical Electrometer Based on Mode Localization of Two Degree-of-Freedom Weakly Coupled Resonators. Journal of Microelectromechanical Systems. 2016;25(5):937-946. DOI: 10.1109/JMEMS.2016.2598780Zhang H, Huang J, Yuan W, Chang HA. HighSensitivity Micromechanical Electrometer Based on Mode Localization of Two Degree-of-Freedom Weakly Coupled Resonators. Journal of Microelectromechanical Systems. 2016;25(5):937-946. DOI: 10.1109/JMEMS.2016.2598780Pillai G, Zope AA, Tsai JM, Li S. Design and Optimization of SHF Composite FBAR Resonators. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency. 2017;64(12):1864-1873. DOI: 10.1109/tuffc.2017.2759811Pillai G, Zope AA, Tsai JM, Li S. Design and Optimization of SHF Composite FBAR Resonators. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency. 2017;64(12):1864-1873. DOI: 10.1109/tuffc.2017.2759811Li SS, Lin YW, Xie Y, Ren Z, Nguyen CT. Micromechanical hollow-disk ring resonators. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems. 2004:821-824 pp. DOI: 10.1109/MEMS.2004.1290711Li SS, Lin YW, Xie Y, Ren Z, Nguyen CT. Micromechanical hollow-disk ring resonators. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems. 2004:821-824 pp. DOI: 10.1109/MEMS.2004.1290711Lee J E-Y, Yan J, Seshia AA. Study of lateral mode SOI-MEMS resonators for reduced anchor loss. Journal of Microelectromechanical Systems. 2011;21(4):1-10. DOI: 10.1088/0960-1317/21/4/045010Lee J E-Y, Yan J, Seshia AA. Study of lateral mode SOI-MEMS resonators for reduced anchor loss. Journal of Microelectromechanical Systems. 2011;21(4):1-10. DOI: 10.1088/0960-1317/21/4/045010Lawes LA. Manufacturing costs for microsystems/ MEMS using high aspect ratio microfabrication techniques. Microsystem Technologies. 2006;13(1):85-95. DOI: 10.1007/s00542-006-0252-6Lawes LA. Manufacturing costs for microsystems/ MEMS using high aspect ratio microfabrication techniques. Microsystem Technologies. 2006;13(1):85-95. DOI: 10.1007/s00542-006-0252-6Beeby S, Ensel G, Kraft M, White N. MEMS Mechanical Sensors. 2004, Publisher: Artech House, Boston, London, 269 p.Beeby S, Ensel G, Kraft M, White N. MEMS Mechanical Sensors. 2004, Publisher: Artech House, Boston, London, 269 p.Tilli M, Motooka T, Airaksinen V, Franssila S, Paulasto-Kröckel M, Lindroos V. Handbook of Silicon Based MEMS Materials and Technologies. 2015, Edition: 2nd, Publisher: Elsevier, 800 p.Tilli M, Motooka T, Airaksinen V, Franssila S, Paulasto-Kröckel M, Lindroos V. Handbook of Silicon Based MEMS Materials and Technologies. 2015, Edition: 2nd, Publisher: Elsevier, 800 p.Zhang M,Yang J, He Y, Yang F, Yang F, Han G, Ning J. Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via. Sensors. 2019;19(1):93. DOI: 10.3390/s19010093Zhang M,Yang J, He Y, Yang F, Yang F, Han G, Ning J. Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via. Sensors. 2019;19(1):93. DOI: 10.3390/s19010093Xu P, Si C, He Y, Wei Z, Jia L, Han G, Ning J, Yang F. A Novel High-Q Dual-Mass MEMS Tuning Fork Gyroscope Based on 3D Wafer-Level Packaging. Sensors. 2021;21(19). DOI: 10.3390/s21196428Xu P, Si C, He Y, Wei Z, Jia L, Han G, Ning J, Yang F. A Novel High-Q Dual-Mass MEMS Tuning Fork Gyroscope Based on 3D Wafer-Level Packaging. Sensors. 2021;21(19). DOI: 10.3390/s21196428Torunbalci MM, Gavcar HD, Yesil F, Alper SE, Akin T. An all-silicon process platform for wafer-level vacuum packaged MEMS devices. IEEE Sensors Journal. 2021;21(13). DOI: 10.1109/JSEN.2021.3073928Torunbalci MM, Gavcar HD, Yesil F, Alper SE, Akin T. An all-silicon process platform for wafer-level vacuum packaged MEMS devices. IEEE Sensors Journal. 2021;21(13). DOI: 10.1109/JSEN.2021.3073928Moriyama M, Suzuki Y, Kumano M, Totsu K, Hirano H, Tanaka S. Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feed-through. IEEJ Transactions on Sensors and Micromachines. 2019;38(10). DOI: 10.1541/ieejsmas.138.485Moriyama M, Suzuki Y, Kumano M, Totsu K, Hirano H, Tanaka S. Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feed-through. IEEJ Transactions on Sensors and Micromachines. 2019;38(10). DOI: 10.1541/ieejsmas.138.485Nesterenko TG, Barbin ES, Koleda AN, Baranov PF, Tanaka S, Tsukamoto TA. Novel multiple-axis MEMS gyro-scope-accelerometer with decoupling frames. Sensor Review. 2019;39(5):670-681. DOI: 10.1108/SR-05-2018-0133Nesterenko TG, Barbin ES, Koleda AN, Baranov PF, Tanaka S, Tsukamoto TA. Novel multiple-axis MEMS gyro-scope-accelerometer with decoupling frames. Sensor Review. 2019;39(5):670-681. DOI: 10.1108/SR-05-2018-0133Temel O, Kalay YE, Akin T. Wafer-Level LowTemperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation. Journal of microelectromechanical systems. 2021;30(1):64-71. DOI: 10.1109/JMEMS.2020.3040039Temel O, Kalay YE, Akin T. Wafer-Level LowTemperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation. Journal of microelectromechanical systems. 2021;30(1):64-71. DOI: 10.1109/JMEMS.2020.3040039Farisi MS Al, Hirano H, Tanaka S. Low-temperature hermetic thermo-compression bonding using electroplated copper sealing frame planarized by fly-cutting for wafer-level MEMS packaging. Sensors and Actuators A: Physical. 2018;279:671-679. DOI: 10.1016/j.sna.2018.06.021Farisi MS Al, Hirano H, Tanaka S. Low-temperature hermetic thermo-compression bonding using electroplated copper sealing frame planarized by fly-cutting for wafer-level MEMS packaging. Sensors and Actuators A: Physical. 2018;279:671-679. DOI: 10.1016/j.sna.2018.06.021Zhang Q, Cicek P-V, Nabki F, El-Gamal M. Thin-film encapsulation technology for above-IC MEMS wafer-level packaging. Journal of micromechanics and microengineering. 2013;23(12):1-10. DOI: 10.1088/0960-1317/23/12/125012Zhang Q, Cicek P-V, Nabki F, El-Gamal M. Thin-film encapsulation technology for above-IC MEMS wafer-level packaging. Journal of micromechanics and microengineering. 2013;23(12):1-10. DOI: 10.1088/0960-1317/23/12/125012He R, Kim C-J. On-Wafer monolithic encapsulation by surface micromachining with porous polysilicon shell. Journal of Micromechanical Systems. 2007;16(2):462-472. DOI: 10.1109/jmems.2007.892797He R, Kim C-J. On-Wafer monolithic encapsulation by surface micromachining with porous polysilicon shell. Journal of Micromechanical Systems. 2007;16(2):462-472. DOI: 10.1109/jmems.2007.892797Verheijden GJAM, Koops GEJ, Phan KL, JTM van Beek. Wafer-level encapsulation technology for MEMS devices using an HF permeable PECVD SIOC capping laye. IEEE 21st International Conference on Micro Electro mechanical systems. 2008:798-801 p. DOI: 10.1109/MEMSYS.2008.4443777Verheijden GJAM, Koops GEJ, Phan KL, JTM van Beek. Wafer-level encapsulation technology for MEMS devices using an HF permeable PECVD SIOC capping laye. IEEE 21st International Conference on Micro Electro mechanical systems. 2008:798-801 p. DOI: 10.1109/MEMSYS.2008.4443777Lee BK, Choi DH. Use of nanoporous columnar thin film in the wafer-level packaging of MEMS devices. Journal of Micro-mechanics and Microengineering. 2010;(20):20-29. DOI: 10.1088/0960-1317/20/4/045002Lee BK, Choi DH. Use of nanoporous columnar thin film in the wafer-level packaging of MEMS devices. Journal of Micro-mechanics and Microengineering. 2010;(20):20-29. DOI: 10.1088/0960-1317/20/4/045002Rajaraman V, Pakula LS, Pham HTM, Sarro PM, French PJ. Robust wafer-level thin-film encapsulation of micro-structures using low stress PECVD silicon carbide. IEEE 22nd International Conference on Micro Electro mechanical systems. 2009:140-143 p. DOI: 10.1109/MEMSYS.2009.4805338Rajaraman V, Pakula LS, Pham HTM, Sarro PM, French PJ. Robust wafer-level thin-film encapsulation of micro-structures using low stress PECVD silicon carbide. IEEE 22nd International Conference on Micro Electro mechanical systems. 2009:140-143 p. DOI: 10.1109/MEMSYS.2009.4805338Candler RN, Park Woo-Tae, Li Huimou, Yama G, Partridge A, Lutz M, Kenny TW. Single wafer encapsulation of MEMS devices. IEEE Transactions on Advanced Packaging. 2003;26(3):227-232. DOI: 10.1109/TADVP.2003.818062Candler RN, Park Woo-Tae, Li Huimou, Yama G, Partridge A, Lutz M, Kenny TW. Single wafer encapsulation of MEMS devices. IEEE Transactions on Advanced Packaging. 2003;26(3):227-232. DOI: 10.1109/TADVP.2003.818062Ng EJ, Lee HK, Ahn CH, Melamud R, Kenny TW. Stability of silicon microelectromechanical systems resonant thermometers. IEEE Sensors Journal. 2013;13(3):987-993. DOI: 10.1109/JSEN.2012.2227708Ng EJ, Lee HK, Ahn CH, Melamud R, Kenny TW. Stability of silicon microelectromechanical systems resonant thermometers. IEEE Sensors Journal. 2013;13(3):987-993. DOI: 10.1109/JSEN.2012.2227708Yang Y, Ng EJ, Chen Y, Flader IB, Kenny TW, Hong VA. A Unified Epi-Seal Process for Fabrication of High-Stability Microelectromechanical Devices. Journal of Microelectromechanical Systems. 2016;25(3):489-497. DOI: 10.1109/JMEMS.2016.2537829Yang Y, Ng EJ, Chen Y, Flader IB, Kenny TW, Hong VA. A Unified Epi-Seal Process for Fabrication of High-Stability Microelectromechanical Devices. Journal of Microelectromechanical Systems. 2016;25(3):489-497. DOI: 10.1109/JMEMS.2016.2537829International Technology Roadmap for Semiconductors (ITRS). Micro-Electro-Mechanical Systems (MEMS) Summary. Available online: https://www.semiconductors.org/wp-content/uploads/2018/08/2013MEMS.pdf (accessed on 10 April 2022).International Technology Roadmap for Semiconductors (ITRS). Micro-Electro-Mechanical Systems (MEMS) Summary. Available online: https://www.semiconductors.org/wp-content/uploads/2018/08/2013MEMS.pdf (accessed on 10 April 2022).Qu H. CMOS MEMS Fabrication Technologies and Devices. Micromachines. 2016;7(1):14. DOI: 10.3390/mi7010014Qu H. CMOS MEMS Fabrication Technologies and Devices. Micromachines. 2016;7(1):14. DOI: 10.3390/mi7010014Geodesic Domes and Space-Frame Structures, Available online: https://www.thoughtco.com/what-is-a-geodesic-dome-177713 (accessed on 10 may 2022).Geodesic Domes and Space-Frame Structures, Available online: https://www.thoughtco.com/what-is-a-geodesic-dome-177713 (accessed on 10 may 2022).

The authors declare that there are no conflicts of interest present.