pimiПриборы и методы измеренийDevices and Methods of Measurements2220-95062414-0473BNTU10.21122/2220-9506-2022-13-4-247-255pimi-786Research ArticleСредства измеренийMeasuring instrumentsВысокочастотный конденсатор с рабочим веществом «изолятор нелегированный кремний изолятор»High-Frequency Capacitor with Working Substance "Insulator-Undoped Silicon-Insulator"ПоклонскийН. А.PoklonskiN. A.

Адрес для переписки:Поклонский Н.А. –                           Белорусский государственный университет,пр-т Независимости, 4, г. Минск 220030, Беларусь e-mail: poklonski@bsu.by

Address for correspondence:Poklonski N.A. –Belarusian State University,Nezavisimosti Ave., 4, Minsk 220030, Belaruse-mail: poklonski@bsu.by

poklonski@bsu.byАникеевИ. И.AnikeevI. I.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

ВыркоС. А.VyrkoS. A.

пр-т Независимости, 4, г. Минск 220030

Nezavisimosti Ave., 4, Minsk 220030

Белорусский государственный университетБеларусьBelarusian State UniversityBelarus202221122022134247255Copyright © Поклонский Н.А., Аникеев И.И., Вырко С.А., 20222022Поклонский Н.А., Аникеев И.И., Вырко С.А.Poklonski N.A., Anikeev I.I., Vyrko S.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://pimi.bntu.by/jour/article/view/786

Исследование параметров электрических конденсаторов с различными рабочими веществами представляет интерес для проектирования и создания элементов электроники, в частности для разработки высокочастотных фазосдвигающих цепей.

Цель работы рассчитать высокочастотную электрическую емкость конденсатора с рабочим веществом «изолятор нелегированный кремний изолятор» при различных подаваемых на конденсатор постоянных напряжениях, частотах измерительного сигнала и температурах.

Предложена модель такого конденсатора, в которой слой нелегированного (собственного) кристаллического кремния (i-Si) толщиной 30 мкм отделен от каждого из электродов конденсатора слоем изолятора (диоксида кремния) толщиной 1 мкм.

Рассчитаны зависимости емкости конденсатора от постоянного электрического напряжения U на металлических электродах на нулевой частоте и на частоте измерительного сигнала 1 МГц при абсолютных температурах T = 300 и 400 К. Показано, что действительная часть емкости конденсатора монотонно возрастает, а мнимая часть отрицательна и немонотонно зависит от U при температуре T = 300 К. Увеличение действительной части емкости конденсатора до геометрической емкости оксидных слоев при увеличении температуры обусловлено уменьшением электрического сопротивления слоя i-Si. Вследствие этого с увеличением температуры до 400 К действительная и мнимая части емкости принимают постоянные значения, независящие от U. Емкость слоя i-Si при увеличении как температуры T, так и напряжения U шунтируется электрической проводимостью этого слоя. Определен сдвиг фаз для синусоидального электрического сигнала с частотой 0,3; 1; 10; 30; 100 и 300 МГц, подаваемого на конденсатор при температурах 300 и 400 К.

The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.

The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance "insulator-undoped silicon-insulator" at different applied to the capacitor direct current (DC) voltages, measuring signal frequencies and temperatures.

A model of such the capacitor is proposed, in which 30 µm thick layer of undoped (intrinsic) crystalline silicon (i-Si) is separated from each of the capacitor electrodes by 1 µm thick insulator layer (silicon dioxide).

The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and 400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically, while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300 and 400 K.

нелегированный (собственный) кристаллический кремнийдиоксид кремнияэлектрическая емкостьтрехслойный плоский электрический конденсаторundoped (intrinsic) crystalline siliconsilicon dioxidecapacitancethree-layer flat capacitorThis work was supported by the Belarusian National Research Program "Materials Science New Materials and Technologies" and Grant for Young Researchers by the Ministry of Education of the Republic of Belarus.ReferencesPoklonski N.A., Vyrko S.A. Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors. Phys. Solid State, 2002, vol. 44, no. 7, pp. 1235-1240. DOI: 10.1134/1.1494615Poklonski N.A., Vyrko S.A. Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors. Phys. Solid State, 2002, vol. 44, no. 7, pp. 1235-1240. 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The authors declare that there are no conflicts of interest present.