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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">pimi</journal-id><journal-title-group><journal-title xml:lang="ru">Приборы и методы измерений</journal-title><trans-title-group xml:lang="en"><trans-title>Devices and Methods of Measurements</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-9506</issn><issn pub-type="epub">2414-0473</issn><publisher><publisher-name>BNTU</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21122/2220-9506-2021-12-2-117-123</article-id><article-id custom-type="elpub" pub-id-type="custom">pimi-710</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Средства измерений</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Measuring instruments</subject></subj-group></article-categories><title-group><article-title>Проектирование планарного феррозондового датчика по технологии печатных плат</article-title><trans-title-group xml:lang="en"><trans-title>Designing a Planar Fluxgate Using the PCB Technology</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Коломейцев</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolomeitsev</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>пр-т Ленина, 30а, г. Томск 634050</p></bio><bio xml:lang="en"><p>Lenin Ave., 30а, Tomsk 634050</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Затонов</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Zatonov</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>пр-т Ленина, 30а, г. Томск 634050</p></bio><bio xml:lang="en"><p>Lenin Ave., 30а, Tomsk 634050</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пищанская</surname><given-names>М. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Pischanskaya</surname><given-names>M. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>пр-т Ленина, 30а, г. Томск 634050</p></bio><bio xml:lang="en"><p>Lenin Ave., 30а, Tomsk 634050</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Баранов</surname><given-names>П. Ф.</given-names></name><name name-style="western" xml:lang="en"><surname>Baranov</surname><given-names>P. F.</given-names></name></name-alternatives><bio xml:lang="ru"><p>пр-т Ленина, 30а, г. Томск 634050</p></bio><bio xml:lang="en"><p>Lenin Ave., 30а, Tomsk 634050</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ильященко</surname><given-names>Д. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Ilyaschenko</surname><given-names>D. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Адрес для переписки: Ильященко Д.П. – Юргинский технологический институт (филиал) Национального исследовательского Томского политехнического университета, ул. Ленинградская, 26, г. Юрга 652055, Россия</p><p>e-mail: mita8@rambler.ru</p></bio><bio xml:lang="en"><p>Address for correspondence: Ilyaschenko D.P. – Yurga Institute of Technology National Research Tomsk Polytechnic University, Leningradskaya st., 26, Yurga 652055, Russia</p><p>e-mail: mita8@rambler.ru</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Верхотурова</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Verkhoturova</surname><given-names>E. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Лермонтова, 83, г. Иркутск 664074</p></bio><bio xml:lang="en"><p>Lermontov str., 83, Irkutsk 664074</p></bio><email xlink:type="simple">mita8@rambler.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Томский политехнический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Tomsk Polytechnic University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Юргинский технологический институт (филиал) Национального исследовательского Томского политехнического университета; &#13;
Институт физики прочности и материаловедения Сибирского отделения Российской академии наук, пр-т Академический, 2/4, г. Томск 634055, Россия</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Yurga Institute of Technology National Research Tomsk Polytechnic University; &#13;
Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Иркутский национальный исследовательский технический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Irkutsk National Research Technical University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>25</day><month>06</month><year>2021</year></pub-date><volume>12</volume><issue>2</issue><fpage>117</fpage><lpage>123</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Коломейцев А.А., Затонов И.А., Пищанская М.И., Баранов П.Ф., Ильященко Д.П., Верхотурова Е.В., 2021</copyright-statement><copyright-year>2021</copyright-year><copyright-holder xml:lang="ru">Коломейцев А.А., Затонов И.А., Пищанская М.И., Баранов П.Ф., Ильященко Д.П., Верхотурова Е.В.</copyright-holder><copyright-holder xml:lang="en">Kolomeitsev A.A., Zatonov I.A., Pischanskaya M.I., Baranov P.F., Ilyaschenko D.P., Verkhoturova E.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://pimi.bntu.by/jour/article/view/710">https://pimi.bntu.by/jour/article/view/710</self-uri><abstract><p>Разработка новых методов, научных приборов и средств для измерения магнитных полей, создаваемых сверхслабыми токами, является одним из перспективных направлений в развитии медицинской техники, геодезических и космических исследований. Целью данной работы являлась разработка малогабаритного датчика, способного детектировать слабые магнитные поля, источниками которых могут быть биотоки, излучения далёких космических объектов и слабые флуктуации магнитного поля земли. Учёные оценивают величины таких магнитных полей в десятые доли нанотесла. </p><p>Среди ключевых требований к датчикам сверхслабого магнитного поля можно отнести разрешающую способность, уровень шумов в измерительном канале, температурную стабильность, линейность и повторяемость характеристик от изделия к изделию. Предлагается добиться этих характеристик путём применения планарных технологий и микроэлектромеханических систем при изготовлении современных датчиков.</p><p>В работе описан полный цикл исследования, от создания компьютерной модели исследуемого датчика до изготовления рабочего прототипа. Для оценки влияния геометрических параметров и влияния свойств материала использована модель Джилса‒Атертона, которая, в отличие от большинства используемых моделей, позволяет учесть нелинейность сердечника, его гистерезисные свойства и влияние остаточной намагниченности.</p><p>Габариты разработанного датчика составляют 40×20×5 мм и технически возможно его уменьшение. Разработанный датчик продемонстрировал линейность характеристик в диапазоне от 0,1 нТл до 50 мкТл при среднеквадратическом токе возбуждения 1,25 мА на частоте 30 кГц. Усреднённый коэффициент преобразования по второй гармонике составляет 54 мкВ/нТл.</p></abstract><trans-abstract xml:lang="en"><p>The development of novel methods, scientific devices and means for measuring magnetic fields generated by ultra-low current is among promising directions in the development of medical equipment and instruments for geodetic surveys and space exploration. The present work is to develop a small sensor capable of detecting weak magnetic fields, which sources are biocurrents, radiation of far space objects and slight fluctuations of the geomagnetic field. Scientists estimate the strength of such magnetic fields as deciles of nanotesla. </p><p>The key requirements for the sensors of ultra-low magnetic field are: resolution, noise level in the measurement channel, temperature stability, linearity and repeatability of the characteristics from one produced item to another. The aforementioned characteristics can be achieved by using planar technologies and microelectromechanical systems (MEMS) in such advanced sensors.</p><p>The work describes a complete R&amp;D cycle, from creating the computer model of the sensor under study to manufacturing of a working prototype. To assess the effect of the geometry and material properties, the Jiles–Atherton model is implemented which, unlike the majority of the models used, allows considering the non-linearity of the core, its hysteresis properties and influence of residual magnetization.</p><p>The dimensions of the developed sensor are 40×20×5 mm, while the technology allows its further diminishment. The sensor has demonstrated the linearity of its properties in the range of magnetic field strength from 0.1 nT to 50 µT for a rms current of excitation of 1.25 mA at a frequency of 30 kHz. The average sensitivity for the second harmonic is 54 µV/nT.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>магнитометр</kwd><kwd>планарный феррозондовый датчик</kwd><kwd>магнитная индукция</kwd><kwd>модель Джилса–Атертона</kwd><kwd>печатная плата</kwd></kwd-group><kwd-group xml:lang="en"><kwd>magnetometer</kwd><kwd>planar fluxgate</kwd><kwd>magnetic induction</kwd><kwd>Jiles–Atherton model</kwd><kwd>printed circuit board</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The investigation was performed at Tomsk Polytechnic  University  within  the  Programme for  Promoting  the  Competitiveness  and   with the support of the Russian Foundation for Basic Research (RFBR) (project no. 19-37 90061) and Grant № МК-873.2020.8 of the President of the Russian Federation.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ripka P. 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