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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">pimi</journal-id><journal-title-group><journal-title xml:lang="ru">Приборы и методы измерений</journal-title><trans-title-group xml:lang="en"><trans-title>Devices and Methods of Measurements</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-9506</issn><issn pub-type="epub">2414-0473</issn><publisher><publisher-name>BNTU</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21122/2220-9506-2019-10-2-138-150</article-id><article-id custom-type="elpub" pub-id-type="custom">pimi-437</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Средства измерений</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Measuring instruments</subject></subj-group></article-categories><title-group><article-title>Управление электрическими и оптическими параметрами активных элементов датчиков влажности на основе пленок оксидов олова переменного состава</article-title><trans-title-group xml:lang="en"><trans-title>Control of Electrical and Optical Parameters of Humidity Sensors Active Elements Based on Tin Oxides Films with Variable Composition</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Адамчук</surname><given-names>Д. B.</given-names></name><name name-style="western" xml:lang="en"><surname>Adamchuck</surname><given-names>D. V.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ксеневич</surname><given-names>В. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Ksenevich</surname><given-names>V. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Адрес для переписки: В.К. Ксеневич – Белорусский государственный университет, пр. Независимости, 4, г. Минск 220030, Беларусь.     e-mail: ksenevich@bsu.by</p></bio><bio xml:lang="en"><p>Address for correspondence: V.K. Ksenevich – Belarusian State University, Nezavisimosty Ave., 4, Minsk 220030, Belarus.     e-mail: ksenevich@bsu.by</p></bio><email xlink:type="simple">ksenevich@bsu.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Belarusian State University</institution><country>Belarus</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>24</day><month>06</month><year>2019</year></pub-date><volume>10</volume><issue>2</issue><fpage>138</fpage><lpage>150</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Адамчук Д.B., Ксеневич В.К., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Адамчук Д.B., Ксеневич В.К.</copyright-holder><copyright-holder xml:lang="en">Adamchuck D.V., Ksenevich V.K.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://pimi.bntu.by/jour/article/view/437">https://pimi.bntu.by/jour/article/view/437</self-uri><abstract><p>Цель работы – разработка методики синтеза пленок оксидов олова различного стехиометрического состава, характеризующихся высокими электропроводностью и коэффициентом пропускания света в УФи видимом диапазоне электромагнитного спектра, для дальнейшего их применения в качестве датчиков влажности и газов, а также электродов для электрои фотокаталитических преобразователей.</p><p>Нестехиометрические пленки SnO/SnO2 /SnO2−δ были синтезированы методом реактивного магнетронного распыления олова на стеклянные подложки в плазме аргона с добавлением кислорода и последующим термическим окислением формируемых слоев на воздухе. Для изменения структурных, оптических и электрических свойств пленок и подбора оптимальных параметров синтеза варьировались содержание кислорода в процессе напыления и температура отжига на воздухе в диапазонах 0−2 об. % и 200−450 °C соответственно. Характеризация пленок проводилась с использованием 4-х зондового метода измерений электрического сопротивления, рентгеновской дифракции и оптической спектроскопии пропускания света.</p><p>В результате комплексного анализа структурных, оптических и электрических свойств пленок установлено, что для получения наиболее прозрачных и проводящих покрытий, перспективных для использования в качестве датчиков влажности и газов, а также в фотоэлектрических устройствах, оптимальными параметрами синтеза являются: содержание кислорода в аргоновой плазме в процессе напыления ≈ 0,8–1,2 об. %, температура отжига на воздухе ≈ 350–375 °C. При этом формируется поликристаллическая пленка, в которой преобладает фаза диоксида олова, содержащая структурные дефекты (кислородные вакансии), обеспечивающие сочетание высоких электропроводности и коэффициента пропускания в видимой и УФ-области электромагнитного спектра.</p></abstract><trans-abstract xml:lang="en"><p>The aim of this work is development of technique for synthesis of tin oxides films with various stoichiometric composition, characterized by high electrical conductivity and light transmittance in the UV and visible range of the electromagnetic spectrum, for their further application as humidity and gas sensors, as well as electrodes for electro-and photocatalytic converters.</p><p>Nonstoichiometric SnO/SnO2 /SnO2−δ films were synthesized by reactive magnetron sputtering of tin onto glass substrates in argon plasma with oxygen addition and with subsequent thermal oxidation of the formed layers in air. To change the structural, optical, and electrical properties of the films and to find out the optimal synthesis parameters, the oxygen content during the deposition process and the annealing temperature in air were varied in the range of 0–2 vol. % and of 200–450 °C, respectively. The characterization of the films was carried out using a 4-probe method for measuring the electrical resistance, X-ray diffraction, and optical spectroscopy of light transmission.</p><p>As a result of a comprehensive analysis of the structural, optical and electrical properties of the films, it was found that the optimal synthesis parameters to obtain the most transparent and conductive coatings promising for use as humidity, gas sensors and in photovoltaic devices are the following: oxygen content in argon plasma during sputtering process is ≈ 0,8–1,2 vol. %, the annealing temperature in air is ≈ 350–375 °C. In this case a polycrystalline film with high electrical conductivity and high transmittance in the visible and UV regions of the electromagnetic spectrum with prevailing of tin dioxide phase with structural defects (oxygen vacancies) is formed.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>реактивное магнетронное распыление</kwd><kwd>оксид олова</kwd><kwd>стехиометрический состав</kwd><kwd>спектры пропускания</kwd><kwd>электропроводность</kwd></kwd-group><kwd-group xml:lang="en"><kwd>reactive magnetron sputtering</kwd><kwd>tin oxide</kwd><kwd>stoichiometric composition</kwd><kwd>transmission spectra</kwd><kwd>electrical conductivity</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках задания 3.3.1 ГПНИ «Конвергенция-2020» (подпрограмма «Объединение»). Авторы выражают благодарность Шиманскому В.И. за проведение рентгеноструктурных исследований.</funding-statement><funding-statement xml:lang="en">This work was carried out within frame of Belarus.ian National Research Program “Convergence-2020” (subprogram “Integration”, grant No. 2.31.1). The authors are grateful to Shimanskij V.I. for implementation of X-ray diffraction studies.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Khan, A.F. Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films / A.F. Khan [et al.] // Applied Surface Science. – 2009. – Vol. 255, № 20. – P. 8562–8565. DOI: 10.1016/j.apsusc.2009.06.020</mixed-citation><mixed-citation xml:lang="en">Khan A.F., Mehmood M., Rana A.M., Bhatti M.T. 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