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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">pimi</journal-id><journal-title-group><journal-title xml:lang="ru">Приборы и методы измерений</journal-title><trans-title-group xml:lang="en"><trans-title>Devices and Methods of Measurements</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-9506</issn><issn pub-type="epub">2414-0473</issn><publisher><publisher-name>BNTU</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21122/2220-9506-2016-7-3-84-89</article-id><article-id custom-type="elpub" pub-id-type="custom">pimi-275</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Методы измерений, контроля, диагностики</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Methods of measurements, monitoring, diagnostics</subject></subj-group></article-categories><title-group><article-title>ИМПЕДАНСНАЯ СПЕКТРОСКОПИЯ ПОЛИКРИСТАЛЛИЧЕСКИХ ПЛЕНОК ДИОКСИДА ОЛОВА</article-title><trans-title-group xml:lang="en"><trans-title>IMPEDANCE SPECTROSCOPY OF POLYCRYSTALLINE TIN DIOXIDE FILMS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Адамчук</surname><given-names>Д. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Adamchuck</surname><given-names>D. V.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ксеневич</surname><given-names>В. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Ksenevich</surname><given-names>V. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Адрес для переписки: Ксеневич В.К. – Белорусский государственный университет, пр. Независимости, 4, 220030, г. Минск, Беларусь e-mail: ksenevich@bsu.by</p></bio><bio xml:lang="en"><p>Address for correspondence: Ksenevich V.K. – Belarusian State University, Nezavisimosty Ave., 4, 220030, Minsk, Belarus  e-mail: ksenevich@bsu.by</p></bio><email xlink:type="simple">ksenevich@bsu.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Горбачук</surname><given-names>Н. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Gorbachuk</surname><given-names>N. I.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шиманский</surname><given-names>В. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Shimanskij</surname><given-names>V. I.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Belarusian State University</institution><country>Belarus</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>07</day><month>12</month><year>2016</year></pub-date><volume>7</volume><issue>3</issue><fpage>312</fpage><lpage>321</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Адамчук Д.В., Ксеневич В.К., Горбачук Н.И., Шиманский В.И., 2016</copyright-statement><copyright-year>2016</copyright-year><copyright-holder xml:lang="ru">Адамчук Д.В., Ксеневич В.К., Горбачук Н.И., Шиманский В.И.</copyright-holder><copyright-holder xml:lang="en">Adamchuck D.V., Ksenevich V.K., Gorbachuk N.I., Shimanskij V.I.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://pimi.bntu.by/jour/article/view/275">https://pimi.bntu.by/jour/article/view/275</self-uri><abstract><p>Целью работы являлось применение метода импедансной спектроскопии для анализа влияния отжига в инертной среде на электрофизические свойства и структуру нестехиометрических пленок диоксида олова. Пленки SnO2 варьируемого стехиометрического состава получали двухступенчатым окислением металлического олова, нанесенного на подложки поликристаллического Al2O3 методом магнетронного напыления на постоянном токе. Для модификации структуры и стехиометрического состава исходных покрытий проводился отжиг в инертной среде в интервале температур 300–800 °С. Измерения импеданса полученных пленок SnO2 проводились в диапазоне частот 20 Гц – 2 МГц при комнатной температуре на воздухе. Исследование электропроводности пленок диоксида олова на переменном токе позволило установить, что в результате высокотемпературного отжига происходит изменение частотных зависимостей действительной и мнимой частей импеданса пленок. Предложены эквивалентные схемы замещения, описывающие частотные зависимости импеданса пленок различного структурного и стехиометрического состава. Использование метода импедансной спектроскопии позволило установить, что в процессе окислительного отжига формируется поликристаллическая пленка диоксида олова, электропроводность которой можно варьировать отжигом в инертной среде, в результате которого происходит перекристаллизация пленок и изменение ее стехиометрического состава, а также увеличение размеров кристаллитов SnO2 . Изменения структуры и фазового состава пленок диоксида олова при проведении высокотемпературного отжига в инертной среде подтверждаются результатами проведенного рентгеноструктурного анализа. Установлено, что анализ годографов импеданса является информативным способом для исследования электрофизических свойств и структуры поликристаллических пленок диоксида олова.</p></abstract><trans-abstract xml:lang="en"><p>The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide films were fabricated by two-step oxidation of metallic tin deposited on the polycrystalline Al2O3 substrates by DC magnetron sputtering. In order to modify the structure and stoichiometric composition, the films were subjected to the high temperature annealing in argon atmosphere in temperature range 300–800 °С. AC-conductivity measurements of the films in the frequency range 20 Hz – 2 MHz were carried out. Variation in the frequency dependencies of the real and imaginary parts of the impedance of tin dioxide films was found to occur as a result of high-temperature annealing. Equivalent circuits for describing the properties of films with various structure and stoichiometric composition were proposed. Possibility of conductivity variation of the polycrystalline tin dioxide films as a result of аnnealing in an inert atmosphere was demonstrated by utilizing impedance spectroscopy. Annealing induces the recrystallization of the films, changing in their stoichiometry as well as increase of the sizes of SnO2 crystallites. Variation of electrical conductivity and structure of tin dioxide films as a result of annealing in inert atmosphere was confirmed by X-ray diffraction analysis. Analysis of the impedance diagrams of tin dioxide films was found to be a powerful tool to study their electrical properties. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>импедансная спектроскопия</kwd><kwd>нестехиометрические пленки диоксида олова</kwd><kwd>высокотемпературный отжиг</kwd><kwd>рентгеноструктурный анализ</kwd></kwd-group><kwd-group xml:lang="en"><kwd>impedance spectroscopy</kwd><kwd>nonstoichiometric tin dioxide films</kwd><kwd>high-temperature annealing</kwd><kwd>X-ray diffraction analysis</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Министерство образования Республики Беларусь</funding-statement><funding-statement xml:lang="en">Ministry of Education of the Republic of Belarus</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Barsoukov, E. Impedance Spectroscopy. Theory, Experiment and Applications / E. 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