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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">pimi</journal-id><journal-title-group><journal-title xml:lang="ru">Приборы и методы измерений</journal-title><trans-title-group xml:lang="en"><trans-title>Devices and Methods of Measurements</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-9506</issn><issn pub-type="epub">2414-0473</issn><publisher><publisher-name>BNTU</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21122/2220-9506-2011-0-1-19-22</article-id><article-id custom-type="elpub" pub-id-type="custom">pimi-161</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Средства измерений</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Measuring instruments</subject></subj-group></article-categories><title-group><article-title>МОДЕЛИРОВАНИЕ КОНСТРУКЦИИ ЛАВИННЫХ ФОТОДИОДОВ С ОХРАННЫМИ ОБЛАСТЯМИ ДЛЯ РЕГИСТРАЦИИ МАЛОМОЩНЫХ СВЕТОВЫХ ПОТОКОВ</article-title><trans-title-group xml:lang="en"><trans-title>SIMULATION OF AVALANCHE PHOTODIODE CONSTRUCTION WITH GUARD AREAS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Корытко</surname><given-names>Н. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Koritko</surname><given-names>N. N.</given-names></name></name-alternatives><email xlink:type="simple">pimi@bntu.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Залесский</surname><given-names>В. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Zalesskij</surname><given-names>V. B.</given-names></name></name-alternatives><email xlink:type="simple">pimi@bntu.by</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Малышев</surname><given-names>В. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Malishev</surname><given-names>V. S.</given-names></name></name-alternatives><email xlink:type="simple">pimi@bntu.by</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хатько</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Khatko</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">pimi@bntu.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский национальный технический университет</institution><country>Belarus</country></aff><aff xml:lang="ru" id="aff-2"><institution>Институт физики НАН Беларуси, г. Минск</institution><country>Belarus</country></aff><aff xml:lang="ru" id="aff-3"><institution>НТЦ Белмикросистемы, г. Минск</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2011</year></pub-date><pub-date pub-type="epub"><day>29</day><month>04</month><year>2015</year></pub-date><volume>0</volume><issue>1</issue><fpage>32</fpage><lpage>39</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Корытко Н.Н., Залесский В.Б., Малышев В.С., Хатько В.В., 2015</copyright-statement><copyright-year>2015</copyright-year><copyright-holder xml:lang="ru">Корытко Н.Н., Залесский В.Б., Малышев В.С., Хатько В.В.</copyright-holder><copyright-holder xml:lang="en">Koritko N.N., Zalesskij V.B., Malishev V.S., Khatko V.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://pimi.bntu.by/jour/article/view/161">https://pimi.bntu.by/jour/article/view/161</self-uri><abstract><p>Проведено моделирование конструкции охранной области и величины напряжения пробоя лавинного фотодиода со структурой диода Рида. Показано влияние полевой обкладки с системой охранных колец на область пробоя n+-p перехода и предложен метод ее реализации. Установлен требуемый профиль примеси в эпитаксиальной пленке при концентрации примеси в подложке ~2,5·1014 см-3, определены пробивные напряжения диода с охранными кольцами, распределение в нем электрического поля и области пробоя.</p></abstract><trans-abstract xml:lang="en"><p>Construction and breakdown voltage of avalanche photodiode with Read diode structure was simulated by computer. It was shown that the guard area construction composed of the metal electrode and guard rings influences on the electrical quantities of n+-p junction breakdown region.</p></trans-abstract></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Розеншер, Э. Оптоэлектроника / Э. Розеншер, Б. Винтер. – М. : Техносфера, 2004. – 416 c.</mixed-citation><mixed-citation xml:lang="en">Розеншер, Э. 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